公开(公告)号：US5609511A

公开(公告)日：1997-03-11

申请号：US421247

申请日：1995-04-13

申请人： Shigeo Moriyama ,  Yoshio Kawamura ,  Yoshio Homma ,  Kikuo Kusukawa ,  Takeshi Furusawa

发明人： Shigeo Moriyama ,  Yoshio Kawamura ,  Yoshio Homma ,  Kikuo Kusukawa ,  Takeshi Furusawa

IPC分类号： B23Q17/24 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  H01L21/304 ,  B24B49/00 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12

摘要： Disclosed is a method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing the substrate on the surface of a polishing pad and relatively moving the substrate and the polishing pad, the method comprising the steps of: detecting the position of a front surface of the thin film layer to be polished using a first sensor and also detecting the position of a bottom surface of the thin film layer using a second sensor, on the way of the polishing; calculating the residual thickness of the thin film layer on the basis of the detected positions of the front and bottom surfaces of the thin film layer; and controlling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of the thin film layer.

摘要翻译： 本发明公开了一种通过将基板压在抛光垫的表面上并使基板和抛光垫相对移动而形成在基板表面上的抛光薄膜层的方法，该方法包括步骤 使用第一传感器检测待研磨的薄膜层的前表面的位置，并且在抛光的同时使用第二传感器检测薄膜层的底面的位置; 基于检测到的薄膜层的前表面和底表面的位置计算薄膜层的剩余厚度; 并根据计算出的薄膜层的残留厚度来控制后续研磨的处理条件。

公开(公告)号：US4984038A

公开(公告)日：1991-01-08

申请号：US194980

申请日：1988-05-17

申请人： Hideo Sunami ,  Makoto Ohkura ,  Masanobu Miyao ,  Kikuo Kusukawa ,  Masahiro Moniwa ,  ShinIchiro Kimura ,  Terunori Warabisako ,  Tokuo Kure

发明人： Hideo Sunami ,  Makoto Ohkura ,  Masanobu Miyao ,  Kikuo Kusukawa ,  Masahiro Moniwa ,  ShinIchiro Kimura ,  Terunori Warabisako ,  Tokuo Kure

IPC分类号： H01L21/762 ,  H01L27/108

CPC分类号： H01L21/762 ,  H01L27/10841

摘要： The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.