公开(公告)号：US6107672A

公开(公告)日：2000-08-22

申请号：US159479

申请日：1998-09-23

申请人： Junji Hirase

发明人： Junji Hirase

IPC分类号： H01L21/761 ,  H01L21/8238 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/761 ,  H01L21/823892

摘要： A semiconductor device include: a substrate of a conductivity type; a first well provided in the substrate and of the same conductivity type as the conductivity type of the substrate; a second well provided in the substrate and of an opposite conductivity type to the conductivity type of the substrate; and a buried well provided at a deep position in the substrate and of the opposite conductivity type to the conductivity type of the substrate. A buried well of the same conductivity type as the conductivity type of the substrate is further provided so as to be in contact with at least a part of a bottom portion of the first well so that the first well is at least partially electrically connected to the substrate.

摘要翻译： 半导体器件包括：导电类型的衬底; 设置在基板中并且与基板的导电类型相同的导电类型的第一阱; 第二阱，设置在衬底中并且与衬底的导电类型相反的导电类型; 以及设置在衬底中的深位置并且与衬底的导电类型相反的导电类型的埋置阱。 进一步提供与基板的导电类型相同的导电类型的掩埋阱，以便与第一阱的底部的至少一部分接触，使得第一阱至少部分地电连接到 基质。