公开(公告)号：US4887145A

公开(公告)日：1989-12-12

申请号：US937610

申请日：1986-12-03

申请人： Katsuyoshi Washio ,  Tohru Nakamura ,  Kazuo Nakazato ,  Masatada Horiuchi ,  Tetsuya Hayashida

发明人： Katsuyoshi Washio ,  Tohru Nakamura ,  Kazuo Nakazato ,  Masatada Horiuchi ,  Tetsuya Hayashida

IPC分类号： H01L21/285 ,  H01L21/32 ,  H01L21/331 ,  H01L29/423 ,  H01L29/732 ,  H01L29/04

CPC分类号： H01L29/66272 ,  H01L21/28525 ,  H01L21/32 ,  H01L29/42304 ,  H01L29/7325

摘要： A bipolar transistor capable of operating at high speeds. In a bipolar transistor designed for operation at high speeds, a polycrystalline silicon layer used as a base electrode effects is a contact area with respect to the base region which lacks precision or tends to increase. Further, when the transistor is formed in a small size, the ratio of the contact area with respect to the polycrystalline area increases, making it difficult to increase the operation speed. In order to reduce the contact area of the polycrystalline silicon layer, this invention deals with the structure in which the polycrystalline silicon layer is brought into contact with a portion near the edge of the convex semiconductor layer maintaining a small size and a high precision.

摘要翻译： 能够高速运行的双极晶体管。 在设计用于高速运行的双极晶体管中，用作基极效应的多晶硅层是相对于缺少精度或倾向于增加的基极区域的接触面积。 此外，当晶体管形成为小尺寸时，接触面积相对于多晶面积的比率增加，使得难以提高操作速度。 为了减少多晶硅层的接触面积，本发明涉及多晶硅层与凸半导体层的边缘附近的部分接触的结构，保持小尺寸和高精度。