公开(公告)号：US09048839B2

公开(公告)日：2015-06-02

申请号：US13905706

申请日：2013-05-30

申请人： Kyung-min Kim ,  Young-bae Kim ,  Eun-ju Cho

发明人： Kyung-min Kim ,  Young-bae Kim ,  Eun-ju Cho

IPC分类号： G11C11/00 ,  H03K17/70

CPC分类号： H03K17/70

摘要： A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.

摘要翻译： 两端开关器件包括电阻开关元件，二极管和电阻电路。 电阻式开关元件基于开关信号在低电阻状态和高电阻状态之间切换，并保持开关电阻状态，直到接收到另一个开关信号。 二极管连接到电阻开关元件，并阻止开关信号传输到输出端子。 电阻电路允许二极管阻塞的开关信号流向参考电位。

公开(公告)号：US08988892B2

公开(公告)日：2015-03-24

申请号：US13590133

申请日：2012-08-20

申请人： Young-bae Kim

发明人： Young-bae Kim

IPC分类号： H05K1/18 ,  H05K1/02 ,  H01L23/498 ,  H05K3/46

CPC分类号： H01L23/49822 ,  H01L2224/16225 ,  H05K1/0271 ,  H05K1/181 ,  H05K3/4688 ,  H05K2201/068

摘要： A substrate and an electronic device including the substrate are described. The substrate includes a first surface configured such that a semiconductor package or a semiconductor die is installable thereon, and a second surface facing the first surface, wherein, with respect to a central plane disposed between the first surface and the second surface at equal distances therefrom, a coefficient of thermal expansion in a first portion between the first surface and the central plane is configured to be higher than a coefficient of thermal expansion in a second portion between the second surface and the central plane configured to be. By using the substrate, undesirable overall shape deformation during semiconductor installation may be reduced or relieved.

摘要翻译： 描述了包括衬底的衬底和电子器件。 衬底包括被配置为使得半导体封装或半导体管芯可安装在其上的第一表面和面向第一表面的第二表面，其中相对于设置在第一表面和第二表面之间的中心平面等距离地设置 在第一表面和中心平面之间的第一部分中的热膨胀系数被构造成高于构成的第二表面和中心平面之间的第二部分中的热膨胀系数。 通过使用基板，可以减少或减轻半导体安装期间的不期望的整体形状变形。

公开(公告)号：US08665358B2

公开(公告)日：2014-03-04

申请号：US12911853

申请日：2010-10-26

申请人： Woo-jong Cho ,  Young-bae Kim ,  Se-hyun Park ,  Ja-yong Koo ,  Mun-cheol Choi ,  Yun-ho Lee

发明人： Woo-jong Cho ,  Young-bae Kim ,  Se-hyun Park ,  Ja-yong Koo ,  Mun-cheol Choi ,  Yun-ho Lee

IPC分类号： H04N5/232 ,  G03B13/00 ,  H04N5/225

CPC分类号： H04N5/23216 ,  G02B7/04 ,  G02B7/10 ,  G03B3/10 ,  G03B17/14 ,  G03B17/20 ,  H04N5/2251 ,  H04N5/2252 ,  H04N5/23203 ,  H04N5/23209 ,  H04N5/23245

摘要： An apparatus for processing an image, including: a body; a lens module disposed on the body; and a control ring disposed on the lens module, wherein the control ring is configured to change a setting value of a setting item.

摘要翻译： 一种用于处理图像的装置，包括：身体; 设置在所述主体上的透镜模块; 以及设置在所述镜头模块上的控制环，其中所述控制环被配置为改变设定项目的设定值。

公开(公告)号：US20130120952A1

公开(公告)日：2013-05-16

申请号：US13590133

申请日：2012-08-20

申请人： Young-bae Kim

发明人： Young-bae Kim

IPC分类号： H05K1/18 ,  H05K1/02

CPC分类号： H01L23/49822 ,  H01L2224/16225 ,  H05K1/0271 ,  H05K1/181 ,  H05K3/4688 ,  H05K2201/068

摘要： A substrate and an electronic device including the substrate are described. The substrate includes a first surface configured such that a semiconductor package or a semiconductor die is installable thereon, and a second surface facing the first surface, wherein, with respect to a central plane disposed between the first surface and the second surface at equal distances therefrom, a coefficient of thermal expansion in a first portion between the first surface and the central plane is configured to be higher than a coefficient of thermal expansion in a second portion between the second surface and the central plane configured to be. By using the substrate, undesirable overall shape deformation during semiconductor installation may be reduced or relieved.

摘要翻译： 描述了包括衬底的衬底和电子器件。 衬底包括被配置为使得半导体封装或半导体管芯可安装在其上的第一表面和面向第一表面的第二表面，其中相对于设置在第一表面和第二表面之间的中心平面等距离地设置 在第一表面和中心平面之间的第一部分中的热膨胀系数被构造成高于构成的第二表面和中心平面之间的第二部分中的热膨胀系数。 通过使用基板，可以减少或减轻半导体安装期间的不期望的整体形状变形。

公开(公告)号：US08406032B2

公开(公告)日：2013-03-26

申请号：US12801830

申请日：2010-06-28

申请人： Seung-eon Ahn ,  Young-bae Kim

发明人： Seung-eon Ahn ,  Young-bae Kim

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  H01L29/8615

摘要： Memory devices and methods of operating the same. A memory cell of a memory device may include a ferroelectric layer and a semiconductor layer bonded to each other. The ferroelectric layer may be of a p-type and the semiconductor layer may be of an n-type. The memory cell may have a switching characteristic due to a depletion region that exists in a junction between the ferroelectric layer and the semiconductor layer. The memory device may be a device writing data using a polarization change of the ferroelectric layer.

摘要翻译： 内存设备及操作方法。 存储器件的存储单元可以包括铁电层和彼此结合的半导体层。 铁电层可以是p型，并且半导体层可以是n型。 由于存在于铁电层和半导体层之间的结中的耗尽区，存储单元可能具有开关特性。 存储器件可以是使用铁电层的偏振变化来写入数据的器件。

公开(公告)号：US20110149633A1

公开(公告)日：2011-06-23

申请号：US12801830

申请日：2010-06-28

申请人： Seung-eon Ahn ,  Young-bae Kim

发明人： Seung-eon Ahn ,  Young-bae Kim

IPC分类号： G11C11/22 ,  H01L27/105

CPC分类号： G11C11/22 ,  H01L29/8615

摘要： Memory devices and methods of operating the same. A memory cell of a memory device may include a ferroelectric layer and a semiconductor layer bonded to each other. The ferroelectric layer may be of a p-type and the semiconductor layer may be of an n-type. The memory cell may have a switching characteristic due to a depletion region that exists in a junction between the ferroelectric layer and the semiconductor layer. The memory device may be a device writing data using a polarization change of the ferroelectric layer.

摘要翻译： 内存设备及操作方法。 存储器件的存储单元可以包括铁电层和彼此结合的半导体层。 铁电层可以是p型，并且半导体层可以是n型。 由于存在于铁电层和半导体层之间的结中的耗尽区，存储单元可能具有开关特性。 存储器件可以是使用铁电层的偏振变化来写入数据的器件。