公开(公告)号：US20130294148A1

公开(公告)日：2013-11-07

申请号：US13938052

申请日：2013-07-09

Applicant: Micron Technology, Inc.

Inventor： Adam D. Johnson

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C11/1693 ,  G11C11/56 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2211/5631 ,  G11C2211/5642

Abstract: The present disclosure includes resistive memory sensing methods and devices. One such method includes performing a voltage based multiple pass sensing operation on a group of cells coupled to a selected conductive line of an array of resistive memory cells. The voltage based multiple pass sensing operation can include providing an indication of those cells of the group that conduct at least a threshold amount of current responsive to one of a number of different sense voltages successively applied to the selected conductive line during each of a corresponding number of the multiple passes, and for each successive pass of the multiple passes, disabling data lines corresponding to those cells determined to have conducted the threshold amount of current in association with a previous one of the multiple passes.

Abstract translation: 本公开包括电阻式存储器感测方法和装置。 一种这样的方法包括对耦合到电阻存储器单元阵列的所选导线的一组单元执行基于电压的多通道感测操作。 基于电压的多通道感测操作可以包括提供响应于在每个相应数字中连续施加到所选导线的多个不同感测电压中的一个传导至少阈值量的电流的组的指示 并且对于多个遍的每个连续通过，禁用与被确定为已经进行了多次通过中的先前一次的阈值电流量的那些单元相对应的数据线。