公开(公告)号：US09721638B1

公开(公告)日：2017-08-01

申请号：US15151065

申请日：2016-05-10

Applicant: Micron Technology, Inc.

Inventor： Christopher Kawamura ,  Howard Kirsch

IPC: G11C11/22

CPC classification number: G11C11/2275 ,  G11C11/1697 ,  G11C11/221 ,  G11C11/2273

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. The magnitude of a voltage applied across a ferroelectric capacitor may be dynamically increased during a write operation. For example, a memory cell may be selected for a write operation, and a voltage may be applied to a digit line corresponding to the memory cell during the write operation. An additional charge may be transferred to the digit line—e.g., from an energy storage component, such as a capacitor, that is in electronic communication with the digit line. In turn, the voltage across the ferroelectric capacitor of the memory cell may be increased.