公开(公告)号：US08703396B2

公开(公告)日：2014-04-22

申请号：US13710729

申请日：2012-12-11

Applicant: Micron Technology, Inc.

Inventor： Scott Sllls ,  Gurtej Sandhu ,  John Smythe ,  Ming Zhang

IPC: G03F7/26

CPC classification number: H01L21/0274 ,  G03F7/20 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338

Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

Abstract translation: 一些实施例包括形成开口图案的方法。 所述方法可以包括在衬底上形成间隔的特征。 特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。 第一材料可以沿着特征的顶部和侧壁形成。 第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。 在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。 然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

公开(公告)号：US20130234091A1

公开(公告)日：2013-09-12

申请号：US13837736

申请日：2013-03-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

IPC: H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Abstract translation: 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。