公开(公告)号：US07365009B2

公开(公告)日：2008-04-29

申请号：US11306590

申请日：2006-01-04

Applicant: Pei-Yu Chou ,  Chun-Jen Huang

Inventor： Pei-Yu Chou ,  Chun-Jen Huang

IPC: H01L21/44

CPC classification number: H01L21/76844 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829

Abstract: A process and structure for a metal interconnect includes providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first patterned hard mask to form a first opening and a second electric conductor, forming a second dielectric layer and a second patterned hard mask, using the second patterned hard mask as an etching mask and using a first patterned hard mask as an etch stop layer to form a second opening and a third electric conductor.

Abstract translation: 金属互连的工艺和结构包括：使用第一图案化硬掩模提供具有第一电导体的基板，形成第一介电层和第一图案化硬掩模，以形成第一开口和第二导电体，形成第二导体 电介质层和第二图案化硬掩模，使用第二图案化硬掩模作为蚀刻掩模，并使用第一图案化硬掩模作为蚀刻停止层以形成第二开口和第三导电体。