摘要:
A semiconductor integrated circuit device is provided which includes a logic circuit utilizing an error detection code. The device has a first circuit train including a series connection of plural stages of operation circuits for receiving input data, performing predetermined operations while the input data propagates through the operation circuits and providing output data; a second circuit train including a series connection of plural stages of error detection code correction circuits for receiving error detection code input corresponding to the input data, applying corrections to the error detection code in correspondence to the operations in the operation circuits in the first circuit train, and outputting an error detection code corresponding to the output data; and at least one error detection circuit for performing a comparison and check of the output of the operation circuit in the first circuit train and the output of a corresponding error detection code correction circuit in the second circuit train. Also, the semiconductor integrated circuit device of this invention comprises a logic circuit incorporating therein an error detection function by doubling the circuits which comprise a logic circuit using the error detection code, doubled operation circuits having the same function and inputted with the same signal, and a comparison circuit for mutually comparing the outputs of the doubled operation circuits.
摘要:
An output interface circuit comprises a CMOS circuit including a pair of complementary MOS transistors and receiving an input signal at the gates of the paired MOS transistors, a bipolar transistor having its base connected to the output of the CMOS circuit and its emitter from which an output signal is delivered, and a control circuit connected between the paired MOS transistors and operable, upon the fall of the output signal, to cut off a current flowing through any one of the paired MOS transistors so as to control the low level at the output of the CMOS circuit such that the low level does not fall before a potential level by which the low level of the output signal is permitted to be at a desirable predetermined potential level. Specifically, the CMOS circuit includes a pair of complementary MOS transistors comprised of a P-type MOS transistor and an N-type MOS transistor and receives an input signal of CMOS level to operate in inverter fashion. The bipolar transistor connected to the output of the CMOS circuit operates as an emitter follower to deliver an output signal of ECL level. Upon the fall of the output signal, the control circuit operates to cut off a current flowing through the N-type MOS transistor so as to control the low level at the output of the CMOS circuit such that the low level does not fall below a level which is about 0.5 to 0.8 volts higher than the low level of the output signal (ECL level) of the bipolar transistor.
摘要:
A novel and very elegant method is proposed for the preparation of N.sub.1 -(2-tetrahydrofuryl)-5-substituted or -unsubstituted uracil, especially, N.sub.1 -(2-tetrahydrofuryl)-5-fluorouracil, by the reaction of the corresponding 5-substituted uracil compound with 2,3-dihydrofuran. The reaction is performed in the presence of a chlorosilane compound, e.g. dimethyldichlorosilane, and a catalytic amount of an organic amine compound and can proceed very rapidly without disadvantageous side reactions to give the objective compound with high purity in a high yield.