专利检索 ap:("Micron Technology, Inc.") AND inv:"Tsz W. Chan" 第 4 页

31.

发明申请
MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDING THE MEMORY CELLS, AND METHODS OF FORMING SAME 审中-公开

公开(公告)号：US20170309818A1

公开(公告)日：2017-10-26

申请号：US15642673

申请日：2017-07-06

申请人： Micron Technology, Inc.

发明人： Tsz W. Chan , D.V. Nirmal Ramaswamy , Qian Tao , Yongjun Jeff Hu , Everett A. McTeer

IPC分类号： H01L45/00 , H01L27/24

CPC分类号： H01L45/145 , H01L27/2427 , H01L45/04 , H01L45/1253 , H01L45/141 , H01L45/1608

摘要： A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

32.

发明授权
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same 有权

公开(公告)号：US09716225B2

公开(公告)日：2017-07-25

申请号：US14476312

申请日：2014-09-03

申请人： Micron Technology, Inc.

发明人： Tsz W. Chan , D. V. Nirmal Ramaswamy , Qian Tao , Yongjun Jeff Hu , Everett A. McTeer

IPC分类号： H01L27/24 , H01L45/00

CPC分类号： H01L45/145 , H01L27/2427 , H01L45/04 , H01L45/1253 , H01L45/141 , H01L45/1608

摘要： A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.