公开(公告)号：US20070156669A1

公开(公告)日：2007-07-05

申请号：US11601612

申请日：2006-11-16

申请人： Giovanni Marchisio ,  Navdeep Dhillon ,  Carsten Tusk ,  Krzysztof Koperski ,  Jisheng Liang ,  Thien Nguyen ,  Matthew Brown

发明人： Giovanni Marchisio ,  Navdeep Dhillon ,  Carsten Tusk ,  Krzysztof Koperski ,  Jisheng Liang ,  Thien Nguyen ,  Matthew Brown

IPC分类号： G06F17/30

CPC分类号： G06F17/30864 ,  G06F17/30011 ,  G06F17/30684 ,  G06F17/30731

摘要： Methods and systems for extending keyword searching techniques to syntactically and semantically annotated data are provided. Example embodiments provide a Syntactic Query Engine (“SQE”) that parses, indexes, and stores a data set as an enhanced document index with document terms as well as information pertaining to the grammatical roles of the terms and ontological and other semantic information. In one embodiment, the enhanced document index is a form of term-clause index, that indexes terms and syntactic and semantic annotations at the clause level. The enhanced document index permits the use of a traditional keyword search engine to process relationship queries as well as to process standard document level keyword searches. This abstract is provided to comply with rules requiring an abstract, and it is submitted with the intention that it will not be used to interpret or limit the scope or meaning of the claims.

摘要翻译： 提供了将关键字搜索技术扩展到语法和语义注释数据的方法和系统。 示例性实施例提供了一种语法查询引擎（“SQE”），其用文档术语解析，索引和存储数据集作为增强文档索引，以及与术语和本体语义信息以及其他语义信息有关的语法角色的信息。 在一个实施例中，增强的文档索引是术语子句索引的形式，其在子句级别对术语和句法和语义注释进行索引。 增强的文档索引允许使用传统的关键字搜索引擎来处理关系查询以及处理标准的文档级关键词搜索。 提供本摘要以符合要求摘要的规则，并提交其意图是不会用于解释或限制权利要求书的范围或含义。

公开(公告)号：US20060157783A1

公开(公告)日：2006-07-20

申请号：US10977226

申请日：2005-01-18

申请人： Jian Chen ,  Thien Nguyen ,  Michael Turner ,  James Vasek

发明人： Jian Chen ,  Thien Nguyen ,  Michael Turner ,  James Vasek

IPC分类号： H01L27/01

CPC分类号： H01L27/1203 ,  H01L21/76283 ,  H01L21/84 ,  H01L29/045 ,  H01L29/6659 ,  H01L29/7846

摘要： A semiconductor device has trenches for defining active regions. After a thin diffusion barrier is deposited in the trenches, some of the trenches are selectively etched to leave different areas in the trench. One of the areas has the diffusion barrier completely removed so that the underlying layer is exposed. Another area has the diffusion barrier remaining. An oxidation step follows so that oxidation occurs at a corner where the diffusion barrier was removed whereas the oxidation is blocked by the diffusion barrier, which functions as a barrier to oxygen. The corners for oxidation are those in which compressive stress is desirable, such as along a portion of the border of a P channel transistor. The corners where the diffusion barrier is left are those in which a compressive stress is undesirable such as the border of an N channel transistor.

摘要翻译： 半导体器件具有用于定义有源区的沟槽。 在沟槽中沉积薄的扩散屏障之后，选择性地蚀刻一些沟槽以在沟槽中留下不同的区域。 其中一个区域具有完全去除扩散阻挡层，使底层被暴露。 另一个区域仍然存在扩散屏障。 遵循氧化步骤，使得氧化发生在去除扩散阻挡层的拐角处，而氧化被用作氧阻挡的扩散阻挡层阻断。 用于氧化的角是那些需要压应力的角，例如沿着P沟道晶体管的边界的一部分。 留下扩散阻挡层的角部是不期望压缩应力的角，例如N沟道晶体管的边界。