公开(公告)号：US20150071432A1

公开(公告)日：2015-03-12

申请号：US14077093

申请日：2013-11-11

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David Merrill Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16 ,  H04L9/30

CPC classification number: G11C11/1673 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1695 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to least one physically unclonable function based on an array of magnetoresistive random-access memory (MRAM) cells. A challenge to the array of MRAM cells may identify some of the cells to be used for the physically unclonable function. Each MRAM cell may include a plurality of magnetic tunnel junctions (MTJs), where the MTJs may exhibit distinct resistances due to manufacturing or fabrication variations. A response to the challenge may be obtained for each cell by using the resistance(s) of one or both of the MTJs for a cell to obtain a value that serves as the response for that cell. The responses for a plurality of cells may be at least partially mapped to provide a unique identifier for the array. The responses generated from the array of cells may serve as a physically unclonable function that may be used to uniquely identify an electronic device.

Abstract translation: 一个特征涉及基于磁阻随机存取存储器（MRAM）单元阵列的至少一个物理上不可克隆的功能。 对MRAM单元阵列的挑战可能会识别要用于物理不可克隆功能的一些单元格。 每个MRAM单元可以包括多个磁隧道结（MTJ），其中MTJ可能由于制造或制造变化而呈现出不同的电阻。 可以通过使用用于单元的MTJ中的一个或两个的电阻来获得用作该单元的响应的值，为每个单元获得对该挑战的响应。 可以至少部分地映射多个小区的响应以提供阵列的唯一标识符。 从单元阵列产生的响应可以用作可以用于唯一地识别电子设备的物理上不可克隆的功能。