公开(公告)号：US08592325B2

公开(公告)日：2013-11-26

申请号：US12685332

申请日：2010-01-11

申请人： Joseph F. Shepard, Jr. ,  Siddarth A. Krishnan ,  Rishikesh Krishnan ,  Michael P. Chudzik

发明人： Joseph F. Shepard, Jr. ,  Siddarth A. Krishnan ,  Rishikesh Krishnan ,  Michael P. Chudzik

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/28185 ,  H01L21/28211 ,  H01L21/28255 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/66651

摘要： A method of creating insulating layers on different semiconductor materials includes providing a substrate having disposed thereon a first material and a second material, the second material having a chemical composition different from the first material; non-epitaxially depositing a continuous sacrificial layer of approximately constant thickness onto the first material and the second material, and then converting the sacrificial layer into a layer consisting essentially of SiO2 without oxidizing more than 10 angstroms into the second material. A structure includes a silicon nitride film disposed conformally on a silicon layer and a silicon germanium layer; a SiO2 layer is disposed on the silicon nitride film.

摘要翻译： 在不同半导体材料上制造绝缘层的方法包括提供其上设置有第一材料和第二材料的基底，所述第二材料具有与第一材料不同的化学组成; 将大约恒定厚度的连续牺牲层非外延沉积到第一材料和第二材料上，然后将牺牲层转变成基本上由SiO 2组成的层，而不将氧化物超过10埃，进入第二材料。 一种结构包括：保形地设置在硅层和硅锗层上的氮化硅膜; SiO 2层设置在氮化硅膜上。

公开(公告)号：US08581351B2

公开(公告)日：2013-11-12

申请号：US13006656

申请日：2011-01-14

申请人： Takashi Ando ,  Michael P. Chudzik ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Keith Kwong Hon Wong

发明人： Takashi Ando ,  Michael P. Chudzik ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Keith Kwong Hon Wong

IPC分类号： H01L29/78

CPC分类号： H01L21/28008 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7833 ,  H01L29/7843

摘要： Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material having a work function about 4.4 eV or less, and can include a material selected from tantalum carbide and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel.

摘要翻译： 提供了替代栅极工作功能材料堆叠，其提供关于硅导带的能级的功函数。 在去除一次性栅极堆叠之后，在栅极腔中形成栅极电介质层。 包括金属和非金属元素的金属化合物层直接沉积在栅极介电层上。 沉积至少一个势垒层和导电材料层并平坦化以填充栅极腔。 金属化合物层包括功函数约4.4eV或更低的材料，并且可以包括选自碳化钽和铪硅合金的材料。 因此，金属化合物层可以提供增强采用硅通道的n型场效应晶体管的性能的功函数。

公开(公告)号：US20110169141A1

公开(公告)日：2011-07-14

申请号：US12685332

申请日：2010-01-11

申请人： Joseph F. Shepard, JR. ,  Siddarth A. Krishnan ,  Rishikesh Krishnan ,  Michael P. Chudzik

发明人： Joseph F. Shepard, JR. ,  Siddarth A. Krishnan ,  Rishikesh Krishnan ,  Michael P. Chudzik

IPC分类号： H01L23/00 ,  H01L21/316

CPC分类号： H01L21/02164 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/28185 ,  H01L21/28211 ,  H01L21/28255 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/66651

摘要： A method of creating insulating layers on different semiconductor materials includes providing a substrate having disposed thereon a first material and a second material, the second material having a chemical composition different from the first material; non-epitaxially depositing a continuous sacrificial layer of approximately constant thickness onto the first material and the second material, and then converting the sacrificial layer into a layer consisting essentially of SiO2 without oxidizing more than 10 angstroms into the second material. A structure includes a silicon nitride film disposed conformally on a silicon layer and a silicon germanium layer; a SiO2 layer is disposed on the silicon nitride film.

摘要翻译： 在不同半导体材料上制造绝缘层的方法包括提供其上设置有第一材料和第二材料的基底，所述第二材料具有与第一材料不同的化学组成; 将大约恒定厚度的连续牺牲层非外延沉积到第一材料和第二材料上，然后将牺牲层转变成基本上由SiO 2组成的层，而不将氧化物超过10埃，进入第二材料。 一种结构包括：保形地设置在硅层和硅锗层上的氮化硅膜; SiO 2层设置在氮化硅膜上。