摘要:
A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT/L≦0.4 holds for a distance ratio AT/L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.
摘要:
The disclosure relates to an optical arrangement in a projection objective of a microlithographic projection exposure apparatus which is designed for operation in EUV. The optical arrangement includes first and second mirrors that are in direct succession to each other along the projection beam direction. The second mirror is rigidly connected to the first mirror.
摘要:
A projection objective of a microlithographic projection exposure apparatus has a last optical element on the image side which is plane on the image side and which, together with an image plane of the projection objective, delimits an immersion space in the direction of an optical axis of the projection objective. This immersion space can be filled with an immersion liquid. At least one liquid or solid volume having plane-parallel interfaces can be introduced into the beam path of the projection objective, the optical thickness of the at least one volume being at least substantially equal to the optical thickness of the immersion space. By introducing and removing the volume, it is possible to convert the projection objective from dry operation to immersed operation in a straightforward way, without extensive adjustments to the projection objective or alignment work.
摘要:
A projection objective of a microlithographic projection exposure apparatus has a correction device which can correct photoinduced imaging errors without optical elements having to be removed for this purpose. The correction device includes a first optical element and a second optical element, whose surface facing the first optical element is provided with a local surface deformation for improving the imaging properties of the projection objective. In a wall, which seals an intermediate space formed between the first optical element and the second optical element, an opening is provided through which the intermediate space can be filled with a fluid. By modifying the refractive index of the fluid adjacent to the surface, the effect of the surface deformation can be modified in a straightforward way.
摘要:
A projection objective of a microlithographic projection exposure apparatus has a correction device which can correct photoinduced imaging errors without optical elements having to be removed for this purpose. The correction device includes a first optical element and a second optical element, whose surface facing the first optical element is provided with a local surface deformation for improving the imaging properties of the projection objective. In a wall, which seals an intermediate space formed between the first optical element and the second optical element, an opening is provided through which the intermediate space can be filled with a fluid. By modifying the refractive index of the fluid adjacent to the surface, the effect of the surface deformation can be modified in a straightforward way.
摘要:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
摘要:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
摘要:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.
摘要:
An objective having a plurality of optical elements arranged to image a pattern from an object field in an object surface of the objective to an image field in an image surface region of the objective at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength λ, includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion Δni=ni(λ0)−ni(λ0+1 pm) for a wavelength variation of 1 pm from a wavelength λ0. The objective satisfies the relation ∑ i = 1 N Δ n i ( s i - d i ) λ 0 NA 4 ≤ A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.
摘要:
A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT/L≦0.4 holds for a distance ratio AT/L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.