Image sensors and electronic devices

    公开(公告)号:US11011583B2

    公开(公告)日:2021-05-18

    申请号:US16167655

    申请日:2018-10-23

    Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

    Visible light sensor embedded organic light emitting diode display panels and display devices including the same

    公开(公告)号:US10978523B2

    公开(公告)日:2021-04-13

    申请号:US16590886

    申请日:2019-10-02

    Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

    ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR AND ELECTRONIC DEVICE

    公开(公告)号:US20190172872A1

    公开(公告)日:2019-06-06

    申请号:US16136584

    申请日:2018-09-20

    Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)−Ts2(° C.)≥Tm1(° C.)−Ts1(° C.)   [Relationship Equation 1]

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING SELECTIVE LIGHT TRANSMITTANCE LAYER

    公开(公告)号:US20190157351A1

    公开(公告)日:2019-05-23

    申请号:US16251600

    申请日:2019-01-18

    Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.

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