公开(公告)号：US09025829B2

公开(公告)日：2015-05-05

申请号：US13672042

申请日：2012-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Kyu Jung ,  Yoon Dong Park ,  Tae Yon Lee ,  Chil Hee Chung ,  Young Gu Jin ,  Hyun Seok Lee ,  Seung Hyuk Chang

IPC: G06K9/00 ,  G06K9/78 ,  H04N5/335 ,  G01S17/02 ,  G01S17/89 ,  G01S7/486 ,  G06K9/20 ,  H04N5/369

CPC classification number: G06K9/78 ,  G01S7/4863 ,  G01S17/023 ,  G01S17/89 ,  G06K9/209 ,  H04N5/335 ,  H04N5/3696

Abstract: An operation method of an image sensor includes determining a distance between the image sensor and an object, and activating at least one of a color pixel, a depth pixel and a thermal pixel included in a pixel array of the image sensor based on a determined distance and a reference distance.

Abstract translation: 图像传感器的操作方法包括：确定图像传感器和对象之间的距离，以及基于确定的距离来激活包括在图像传感器的像素阵列中的彩色像素，深度像素和热像素中的至少一个 和参考距离。

公开(公告)号：US11469277B2

公开(公告)日：2022-10-11

申请号：US16900011

申请日：2020-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chil Hee Chung ,  Sangyoon Lee ,  Yong Wan Jin ,  Kyung Bae Park ,  Kwang Hee Lee

IPC: H01L27/32 ,  H01L51/50 ,  H01L27/30 ,  H01L31/0256 ,  G06V40/19 ,  G06V40/13 ,  G06F3/041 ,  G06V40/16

Abstract: An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

公开(公告)号：US11424302B2

公开(公告)日：2022-08-23

申请号：US16900011

申请日：2020-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chil Hee Chung ,  Sangyoon Lee ,  Yong Wan Jin ,  Kyung Bae Park ,  Kwang Hee Lee

IPC: H01L27/32 ,  H01L51/50 ,  H01L27/30 ,  H01L31/0256 ,  G06V40/19 ,  G06V40/13 ,  G06F3/041 ,  G06V40/16

Abstract: An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

公开(公告)号：US10727285B2

公开(公告)日：2020-07-28

申请号：US16027456

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chil Hee Chung ,  Sangyoon Lee ,  Yong Wan Jin ,  Kyung Bae Park ,  Kwang Hee Lee

IPC: H01L27/32 ,  G06K9/00 ,  H01L27/30 ,  G06F3/041

Abstract: An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

公开(公告)号：US10371969B2

公开(公告)日：2019-08-06

申请号：US15671369

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Joo Jang ,  Chil Hee Chung ,  Tae Hyung Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Dae Young Chung

IPC: H01L51/50 ,  G02F1/017 ,  G02F2/02 ,  C09K11/00 ,  C09K11/70 ,  H05B33/14 ,  B82Y20/00 ,  G02F1/355

Abstract: An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

公开(公告)号：US09384973B2

公开(公告)日：2016-07-05

申请号：US14293187

申请日：2014-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-sang Kim ,  Jong-baek Seon ,  Myung-kwan Ryu ,  Chil Hee Chung

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02521 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.

Abstract translation: 提供半导体膜，其形成方法，包括半导体膜的晶体管以及制造晶体管的方法。 提供了包括锌（Zn），氮（N），氧（O）和氟（F））的半导体膜以及形成半导体膜的方法。 提供了包括锌，氮和氟的半导体膜，以及形成半导体膜的方法。 可以使用溅射，离子注入，等离子体处理，化学气相沉积（CVD）或溶液工艺来形成半导体膜。 可以通过使用锌靶和包括氟的反应性气体来进行溅射。 反应性气体可以包括氮和氟，或氮，氧和氟。