IMAGING DEVICE AND ELECTRONIC DEVICE

    公开(公告)号:US20220320172A1

    公开(公告)日:2022-10-06

    申请号:US17621335

    申请日:2020-06-22

    Abstract: The present invention relates to a highly functional imaging device that can be manufactured through a small number of steps. A first stacked body is formed in which a circuit provided with a transistor including a metal oxide in its channel formation region (hereinafter, OS transistor) is stacked over a circuit including a Si transistor. A second stacked body is formed in which an OS transistor is provided over a Si photodiode. Layers including the OS transistors of the first stacked body and the second stacked body are bonded to each other to obtain electrical connection between circuits. With such a structure, even when a structure is employed in which a plurality of circuits having different functions are stacked, the number of polishing steps and bonding steps can be reduced, improving the yield.

    Imaging Apparatus and Electronic Device

    公开(公告)号:US20210377463A1

    公开(公告)日:2021-12-02

    申请号:US17282129

    申请日:2019-10-07

    Abstract: An imaging apparatus including a light source is provided. The imaging apparatus includes a light-emitting device and a photoelectric conversion device in a pixel, and a pixel circuit has a function of outputting third data generated by multiplying obtained first data by second data (weight). Calculating the third data externally enables more detailed information on a subject with respect to a specific wavelength to be obtained. In addition, reading out collectively a plurality of pixels to which proper weight is given enables output of difference data between pixels and the like, which allows external calculation to be omitted.

    IMAGING DEVICE, OPERATION METHOD THEREOF, AND ELECTRONIC DEVICE

    公开(公告)号:US20210202549A1

    公开(公告)日:2021-07-01

    申请号:US17057526

    申请日:2019-06-11

    Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

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