公开(公告)号：US20180371609A1

公开(公告)日：2018-12-27

申请号：US16023137

申请日：2018-06-29

Applicant: SLT Technologies, Inc

Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

IPC: C23C16/30 ,  C23C16/448 ,  C30B29/40 ,  C30B7/10 ,  C23C16/44 ,  C01B21/06 ,  C23C16/01

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.