公开(公告)号：US20210280127A1

公开(公告)日：2021-09-09

申请号：US17187996

申请日：2021-03-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JIN SUNG AN ,  Seok Je SEONG ,  Ji Seon LEE ,  Se Wan SON

IPC: G09G3/32 ,  H01L33/62 ,  H01L33/16

Abstract: A display device includes a substrate, a polycrystalline semiconductor layer including a channel of a driving transistor, and a channel of a seventh transistor, a gate electrode of the driving transistor overlapping the channel thereof, a gate electrode of the seventh transistor overlapping the channel thereof, an oxide semiconductor layer including a channel of a fourth transistor, a gate electrode thereof overlapping the channel of the fourth transistor, a first initialization voltage line connected to a first electrode of the fourth transistor, the first initialization voltage line and the gate electrode of the fourth transistor being position on a same layer, and a second initialization voltage line connected to a second electrode of the seventh transistor, the second initialization voltage line and the first initialization voltage line being positioned on different layers from each other.

公开(公告)号：US20210265579A1

公开(公告)日：2021-08-26

申请号：US17142818

申请日：2021-01-06

Applicant: Samsung Display Co., LTD.

Inventor： Wang Woo LEE ,  Sung Ho KIM ,  Hyeon Sik KIM ,  Joon Hyoung PARK ,  Seok Je SEONG ,  Jin Sung AN ,  Jin Seok OH ,  Min Woo WOO ,  Ji Seon LEE ,  Pil Suk LEE ,  Yun Sik JOO

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

公开(公告)号：US20210097930A1

公开(公告)日：2021-04-01

申请号：US17024812

申请日：2020-09-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin Sung AN ,  Seok Je SEONG ,  Seong Jun LEE ,  Jae Hyun LEE ,  Yoon Jong CHO

IPC: G09G3/32

Abstract: A display device includes: a pixel unit including pixels connected to first scan lines, second scan lines, and data lines; a scan driver for supplying a first scan signal to the pixels through the first scan lines at a first frequency and supplying a second scan signal to the pixels through the second scan lines at a second frequency different from the first frequency in a first mode; a first signal supply for supplying an inspection signal to the pixels through at least one of the data lines in response to the first scan signal in a first period of the first mode; and a second signal for supply supplying a bias signal to the pixels through the data lines in response to the first scan signal in a second period of the first mode.

公开(公告)号：US20200219954A1

公开(公告)日：2020-07-09

申请号：US16822222

申请日：2020-03-18

Applicant: Samsung Display Co., Ltd.

Inventor： Woo Ho JEONG ,  Se Myung KWON ,  Yoon Ho KIM ,  Seok Je SEONG ,  Joon Hoo CHOI

IPC: H01L27/32 ,  H01L29/786 ,  H01L21/477 ,  H01L29/66

Abstract: An organic fight-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.