Abstract:
A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.
Abstract:
A method of manufacturing a flexible device including a two-dimensional (2D) material, e.g., graphene, includes forming a dielectric layer on a first substrate, forming a two-dimensional (2D) material layer on the dielectric layer; forming a pattern in the 2D material layer, forming a second substrate on the dielectric layer and the 2D material layer, the first substrate including a flexible material, removing the first substrate, and forming a source electrode, a drain electrode, and a gate electrode on the dielectric layer.