公开(公告)号：US20220231013A1

公开(公告)日：2022-07-21

申请号：US17223829

申请日：2021-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byounghak Hong ,  Seunghyun Song ,  Hwichan Jun ,  Inchan Hwang

IPC: H01L27/06 ,  H01L27/092 ,  H01L21/822 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238

Abstract: A stacked semiconductor device includes: a substrate; a 1st transistor formed on a substrate, and including a 1st active region surrounded by a 1st gate structure and 1st source/drain regions; and a 2nd transistor stacked on the 1st transistor, and including a 2nd active region surrounded by a 2nd gate structure and 2nd source/drain regions, wherein the 1st active region and the 1st gate structure are vertically mirror-symmetric to the 2nd active region and the 2nd gate structure, respectively, with respect to a virtual plane therebetween.

公开(公告)号：US20220157815A1

公开(公告)日：2022-05-19

申请号：US17152388

申请日：2021-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byounghak Hong ,  Seunghyun Song ,  Hwichan Jun

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66

Abstract: A method of manufacturing a semiconductor device having a self-aligned gate structure includes: providing at least one channel structure above at least one substrate; depositing at least one gate masking layer on the at least one channel structure so that the at least one gate masking layer is formed on top and side surfaces of the at least one channel structure and spread outward above the at least one substrate to form outer-extended portions of the at least one gate masking layer, before a gate-cut process is performed, wherein the at least one gate masking layer is self-aligned with respect to the at least one channel structure by the depositing; and removing the outer-extended portions of the at least one gate masking layer so that the at least one gate masking layer at both sides of the at least one channel structure has a same width.