公开(公告)号：US20210073610A1

公开(公告)日：2021-03-11

申请号：US16772281

申请日：2018-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka KURIKI ,  Sachiaki TEZUKA ,  Kouhei TOYOTAKA

IPC: G06N3/02 ,  H01L21/02 ,  H05H1/46

Abstract: A thin film manufacturing apparatus capable of forming thin films with high uniformity is provided. A thin film manufacturing apparatus capable of controlling various kinds of set conditions during thin film formation is provided. The thin film manufacturing apparatus includes a treatment chamber, a gas supply means, an evacuation means, an electric power supply means, an arithmetic portion, and a control device; the gas supply means supplies gas into the treatment chamber; the evacuation means adjusts a pressure in the treatment chamber; the electric power supply means applies voltage between electrodes provided in the treatment chamber; the arithmetic portion has a function of performing detection of an abnormal state and inference with the use of a neural network during thin film formation; and the control device controls various kinds of set conditions in accordance with results of the detection and the inference during the thin film formation.

公开(公告)号：US20210035497A1

公开(公告)日：2021-02-04

申请号：US16964735

申请日：2019-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei TOYOTAKA ,  Daiki NAKAMURA

IPC: G09G3/3225 ,  H01L27/32 ,  H01L51/52

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, a first functional layer, and a second functional layer. The display region includes a pixel, and the pixel includes a display element and a pixel circuit. The first functional layer includes the pixel circuit, a scan line, and a first connection portion. The display element is electrically connected to the pixel circuit, and the pixel circuit is electrically connected to the scan line. The second functional layer includes a region overlapping with the first functional layer, the second functional layer includes a driver circuit and a wiring, and the driver circuit is provided so that the pixel circuit is positioned between the driver circuit and the display element. The wiring is electrically connected to the scan line at the first connection portion, and the wiring is electrically connected to the driver circuit.

公开(公告)号：US20200312261A1

公开(公告)日：2020-10-01

申请号：US16850401

申请日：2020-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kouhei TOYOTAKA ,  Shunpei YAMAZAKI

IPC: G09G3/36 ,  G11C19/28 ,  H01L27/12

Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

公开(公告)号：US20200279525A1

公开(公告)日：2020-09-03

申请号：US16758108

申请日：2018-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu KAWASHIMA ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Kouhei TOYOTAKA ,  Kei TAKAHASHI ,  Kentaro HAYASHI ,  Shunpei YAMAZAKI

IPC: G09G3/3225 ,  H01L27/32 ,  H01L29/786

Abstract: A display device that can display a high-luminance image is provided. The display device includes a display element and a memory circuit which is electrically connected to a first wiring and a second wiring. First, a reference potential is supplied to the first wiring. Next, a first image signal is supplied to the memory circuit through the second wiring. Then, the second image signal is added to the first image signal by supplying the second image signal to the memory circuit through the first wiring. After that, an image obtained by superimposing an image corresponding to the first image signal and an image corresponding to the second image signal on each other is displayed with the display element.

公开(公告)号：US20190088785A1

公开(公告)日：2019-03-21

申请号：US16121700

申请日：2018-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L29/26 ,  H01L23/66 ,  H01L27/12 ,  H01L27/088 ,  G06K19/077 ,  H01L29/66 ,  H01L29/24 ,  H01L21/8236 ,  G11C7/00 ,  G11C19/28 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20170358683A1

公开(公告)日：2017-12-14

申请号：US15671199

申请日：2017-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/11 ,  H01L49/02 ,  G06F15/76 ,  H01L29/423 ,  H01L29/24 ,  H01L29/417 ,  H01L27/108

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

公开(公告)号：US20170186777A1

公开(公告)日：2017-06-29

申请号：US15375453

申请日：2016-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei TOYOTAKA ,  Kei TAKAHASHI ,  Hideaki SHISHIDO ,  Koji KUSUNOKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/04

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869

Abstract: A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

公开(公告)号：US20170040459A1

公开(公告)日：2017-02-09

申请号：US15296432

申请日：2016-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

公开(公告)号：US20170039931A1

公开(公告)日：2017-02-09

申请号：US15225950

申请日：2016-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Kouhei TOYOTAKA

IPC: G09G3/20 ,  G06F3/041 ,  G09G3/34 ,  G09G3/36 ,  G09G3/3225

CPC classification number: G06F3/0414 ,  G06F3/0488 ,  G09G3/3225 ,  G09G3/3648 ,  G09G5/363 ,  G09G2300/023 ,  G09G2300/046 ,  G09G2310/06 ,  G09G2330/023 ,  G09G2354/00 ,  G09G2360/144

Abstract: Provided is a novel display panel which is highly convenient or reliable or a driving method thereof. The display panel includes a first display element, a first conductive film electrically connected to the first display element, a second conductive film having a region overlapping with the first conductive film, an insulating film having a region sandwiched between the second conductive film and the first conductive film, a pixel circuit electrically connected to the second conductive film, and a second display element electrically connected to the pixel circuit. The insulating film has an opening. The second conductive film is electrically connected to the first conductive film in the opening.

Abstract translation: 提供了一种非常方便或可靠的新型显示面板或其驱动方法。 显示面板包括第一显示元件，与第一显示元件电连接的第一导电膜，具有与第一导电膜重叠的区域的第二导电膜，具有夹在第二导电膜和第一导电膜之间的区域的绝缘膜 导电膜，电连接到第二导电膜的像素电路，以及电连接到像素电路的第二显示元件。 绝缘膜具有开口。 第二导电膜在开口中电连接到第一导电膜。

公开(公告)号：US20160118418A1

公开(公告)日：2016-04-28

申请号：US14989927

申请日：2016-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。