公开(公告)号：US06540941B2

公开(公告)日：2003-04-01

申请号：US09775947

申请日：2001-02-02

申请人： Kyung Soo Suh ,  Seung Youl Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Ick Kyu Choi ,  Yong Jei Lee ,  Jae Dong Byun

发明人： Kyung Soo Suh ,  Seung Youl Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Ick Kyu Choi ,  Yong Jei Lee ,  Jae Dong Byun

IPC分类号： C09K1154

CPC分类号： C09K11/642

摘要： The present invention provides a green phosphor for fluorescent display having a composition represented by a chemical formula: xZnO+(2-x-y/2)Ga2O3+yAl2O3:zMn2+ where 0.8≦x

摘要翻译： 本发明提供一种用于荧光显示器的绿色荧光体，其具有由以下化学式表示的组成：xZnO +（2-x-y / 2）Ga2O3 + yAl2O3：zMn2 +，其中0.8 <= x <1.0; 0

公开(公告)号：US07564053B2

公开(公告)日：2009-07-21

申请号：US11188912

申请日：2005-07-25

申请人： Gi Heon Kim ,  Sung Min Yoon ,  Kyung Soo Suh

发明人： Gi Heon Kim ,  Sung Min Yoon ,  Kyung Soo Suh

IPC分类号： H01L51/30 ,  G03C1/00

CPC分类号： H01L51/0516 ,  H01L51/0545

摘要： Provided are a composition for a photo-reactive organic polymeric gate insulating layer and an organic thin film transistor using the same. The composition for the photo-reactive organic polymeric gate insulating layer comprises poly (vinyl) phenol and a photo-reactive material, and the organic thin film transistor has a photo-reactive organic polymeric gate insulating layer formed of the composition. The composition for the photo-reactive organic polymeric gate insulating layer can add the photo patterning characteristics to an organic polymer and can form the layer with the enhanced electrical characteristics.

摘要翻译： 提供了一种光反应性有机聚合物栅极绝缘层和使用其的有机薄膜晶体管的组合物。 用于光反应性有机聚合物栅极绝缘层的组合物包含聚（乙烯基）苯酚和光反应性材料，并且有机薄膜晶体管具有由该组合物形成的光反应性有机聚合物栅极绝缘层。 用于光反应性有机聚合物栅极绝缘层的组合物可以将有机聚合物的光图案化特征加入，并且可以形成具有增强的电特性的层。

公开(公告)号：US07687807B2

公开(公告)日：2010-03-30

申请号：US11834044

申请日：2007-08-06

申请人： Jae Bon Koo ,  Seong Hyun Kim ,  Kyung Soo Suh ,  Chan Hoe Ku ,  Sang Chul Lim ,  Jung Hun Lee

发明人： Jae Bon Koo ,  Seong Hyun Kim ,  Kyung Soo Suh ,  Chan Hoe Ku ,  Sang Chul Lim ,  Jung Hun Lee

IPC分类号： H01L31/00

CPC分类号： H01L27/281 ,  H01L27/283

摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.

摘要翻译： 提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。 通常，p型有机半导体是稳定的。 因此，当逆变器仅由p型半导体形成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E变换器更优选 的增强负载和增强驱动器。 然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。 为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且 提出了其制造方法。 根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

公开(公告)号：US08039295B2

公开(公告)日：2011-10-18

申请号：US12906457

申请日：2010-10-18

申请人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

发明人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0545

摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

公开(公告)号：US07842952B2

公开(公告)日：2010-11-30

申请号：US11931461

申请日：2007-10-31

申请人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

发明人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

IPC分类号： H01L31/00

CPC分类号： H01L27/283 ,  H01L51/0545

摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

公开(公告)号：US06373184B1

公开(公告)日：2002-04-16

申请号：US09435038

申请日：1999-11-05

申请人： Kyung Soo Suh ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Jae Dong Byun

发明人： Kyung Soo Suh ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Jae Dong Byun

IPC分类号： C09K1150

CPC分类号： C09K11/7703

摘要： Provided with a phosphor for a fluorescent display that includes at least one divalent transition metal and at least two trivalent metal added to SrTiO3 and having a formula of: SrTi1−x−yMxNyO3:zPr3+ wherein M represents the divalent transition metal selected from the group consisting of Zn, Mn, Co, Ni, Cu and Cd, N represents the trivalent metal selected from the group consisting of Ga, Al, In and B, and 0≦x≦0.1, 0≦y≦0.1 and 0≦z≦0.1.

摘要翻译： 提供一种用于荧光显示器的荧光体，其包括至少一种二价过渡金属和添加到SrTiO 3中的至少两种三价金属，并具有下式：其中M表示选自Zn，Mn，Co， Ni，Cu和Cd，N表示选自Ga，Al，In和B的三价金属，0表示0 <= x <= 0.1,0 <= y <= 0.1，0 <= z <= 0.1。