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    Red phosphor for fluorescent display and preparation method thereof
    2.
    发明授权
    Red phosphor for fluorescent display and preparation method thereof 有权
    荧光显示用红色荧光体及其制备方法

    公开(公告)号：US06373184B1

    公开(公告)日：2002-04-16

    申请号：US09435038

    申请日：1999-11-05

    申请人： Kyung Soo Suh ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Jae Dong Byun

    发明人： Kyung Soo Suh ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Jae Dong Byun

    IPC分类号： C09K1150

    CPC分类号： C09K11/7703

    摘要： Provided with a phosphor for a fluorescent display that includes at least one divalent transition metal and at least two trivalent metal added to SrTiO3 and having a formula of: SrTi1−x−yMxNyO3:zPr3+ wherein M represents the divalent transition metal selected from the group consisting of Zn, Mn, Co, Ni, Cu and Cd, N represents the trivalent metal selected from the group consisting of Ga, Al, In and B, and 0≦x≦0.1, 0≦y≦0.1 and 0≦z≦0.1.

    摘要翻译： 提供一种用于荧光显示器的荧光体，其包括至少一种二价过渡金属和添加到SrTiO 3中的至少两种三价金属，并具有下式：其中M表示选自Zn，Mn，Co， Ni，Cu和Cd，N表示选自Ga，Al，In和B的三价金属，0表示0 <= x <= 0.1,0 <= y <= 0.1，0 <= z <= 0.1。

    Field emission device and method of fabricating the same
    5.
    发明授权
    Field emission device and method of fabricating the same 失效
    场发射装置及其制造方法

    公开(公告)号：US06729923B2

    公开(公告)日：2004-05-04

    申请号：US10160413

    申请日：2002-05-30

    申请人： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

    发明人： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

    IPC分类号： H01L2100

    CPC分类号： H01J9/025 ,  H01J2201/30403

    摘要： The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.

    摘要翻译： 场致发射器件及其制造方法技术领域本发明涉及场致发射器件及其制造方法。 该方法包括使用硅半导体工艺形成具有纳米尺寸的孔，然后在孔内形成发射体以形成场致发射器件。 因此，本发明可以降低驱动电压，从而降低功耗。

    Field emission display device
    6.
    发明授权
    Field emission display device 有权
    场致发射显示装置

    公开(公告)号：US06204608B1

    公开(公告)日：2001-03-20

    申请号：US09442486

    申请日：1999-11-18

    申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

    发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

    IPC分类号： G09G330

    CPC分类号： G09G3/22 ,  G09G2300/0842

    摘要： A field emission display device is disclosed. The device comprises an upper plate and a lower plate that are vacuum-packaged in parallel, wherein the lower plate is composed of matrix-addressable pixels, wherein the pixel formed on an insulation substrate comprises a field emitter array, a control thin-film transistor having a drain connected to an emitter electrode of the emitter array, and an addressing thin-film transistor having a drain connected to a gate electrode of the control thin-film transistor. Designing the control thin-film transistor to have a large parasitic capacitance between the source and the gate, one can obtain an active matrix display having a memory function and eliminate a conventional complex fabricating process of a memory capacitor, thereby simplify a panel fabricating process remarkably and largely increase the aperture ratio of a pixel. Furthermore, in the present invention, introducing glass for a substrate material instead of conventional single crystal silicon wafer, one can cheaply produce a large size panel and easily carry out a vacuum packaging that is indispensable for fabricating a field emission display.

    摘要翻译： 公开了一种场致发射显示装置。 该装置包括平行真空包装的上板和下板，其中下板由可矩阵寻址的像素组成，其中形成在绝缘基板上的像素包括场致发射阵列，控制薄膜晶体管 具有连接到发射极阵列的发射极的漏极，以及具有连接到控制薄膜晶体管的栅电极的漏极的寻址薄膜晶体管。 将控制薄膜晶体管设计成在源极和栅极之间具有大的寄生电容，可以获得具有存储功能的有源矩阵显示器，并消除了存储电容器的常规复杂制造工艺，从而显着地简化了面板制造工艺 并大大提高像素的开口率。 此外，在本发明中，为了代替传统的单晶硅晶片引入用于基板材料的玻璃，可以廉价地生产大尺寸面板，并且容易地实现对于制造场致发射显示器而言不可或缺的真空包装。

    Method of manufacturing a vacuum device
    7.
    发明授权
    Method of manufacturing a vacuum device 失效
    制造真空装置的方法

    公开(公告)号：US5953580A

    公开(公告)日：1999-09-14

    申请号：US925197

    申请日：1997-09-08

    申请人： Sung Weon Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Hyung Joun Yoo

    发明人： Sung Weon Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Hyung Joun Yoo

    IPC分类号： H01L21/205 ,  H01J9/02 ,  H01L20/100

    CPC分类号： H01J9/025

    摘要： A method of manufacturing a vacuum device utilizing a sputtering process is disclosed. According to the present invention, the vacuum device includes a silicon substrate. An emission electrode having a sharp ended tip is formed by etching the silicon substrate. An insulating layer is formed on the silicon substrate so as to make the entire structure of the emission electrode to be exposed, with the emission electrode being surrounded by the insulating layer. A gate electrode is then formed adjacent to the sharp ended tip of the emission electrode. According to the present invention, it has advantages that the emission electrode is manufactured by forming the silicon pillar using the isotropic etching and anisotropic etching and the gate electrode can be easily formed adjacent to the emission electrode by using the sputtering method after the gate insulating layer is formed. Further, the distance between the emission electrode and the gate electrode may be easily adjusted, and the vacuum device may be operated with the desired voltage by controlling the distance between the emission electrode and the gate electrode of the vacuum device.

    摘要翻译： 公开了一种使用溅射工艺制造真空装置的方法。 根据本发明，真空装置包括硅基板。 通过蚀刻硅衬底形成具有尖端的尖端的发射电极。 在硅衬底上形成绝缘层，以使发射电极的整个结构被暴露，发射电极被绝缘层包围。 然后在发射电极的尖端处形成栅电极。 根据本发明，具有通过使用各向同性蚀刻和各向异性蚀刻形成硅柱来制造发射电极的优点，并且通过在栅绝缘层之后使用溅射法容易地在栅极电极附近形成栅电极 形成了。 此外，可以容易地调节发射电极和栅电极之间的距离，并且可以通过控制发射电极和真空装置的栅电极之间的距离，以期望的电压来操作真空装置。

    Field emission display with diode-type field emitters
    8.
    发明授权
    Field emission display with diode-type field emitters 有权
    具有二极管型场发射器的场发射显示

    公开(公告)号：US06307323B1

    公开(公告)日：2001-10-23

    申请号：US09474528

    申请日：1999-12-29

    申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

    发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

    IPC分类号： G05G310

    CPC分类号： B82Y10/00 ,  G09G3/22 ,  H01J31/126 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

    摘要： A field emission display in which field emission devices are applied to a flat panel display. A field emission display with diode-type field emitters includes an upper plate and a lower plate, the upper plate and the lower plate are vacuum-packaged in parallel. The lower plate includes a plurality of column signal buses and a plurality of row signal buses, film type field emitters, and switching devices. The column signal buses and the row signal buses are made of metallic material. Pixels are defined by the column signal buses and the row signal buses. A film type field emitter and a switching device are formed inside each pixel. The switching device controls the field emitter on the basis of scan signals and data signals. The scan signals and data signals are loaded to the switching devices through the column signal buses and the row signal buses. The switching device includes at least three electrodes for connection with the column signal bus, the row signal bus, and the field emitter.

    摘要翻译： 场发射装置用于平板显示器的场致发射显示器。 具有二极管型场致发射体的场发射显示器包括上板和下板，上板和下板被并联真空包装。 下板包括多个列信号总线和多个行信号总线，薄膜型场发射器和开关装置。 列信号总线和行信号总线由金属材料制成。 像素由列信号总线和行信号总线定义。 在每个像素内部形成有膜型场发射器和开关器件。 开关装置根据扫描信号和数据信号控制场发射器。 扫描信号和数据信号通过列信号总线和行信号总线加载到开关装置。 开关装置包括用于与列信号总线，行信号总线和场发射器连接的至少三个电极。

    Method for manufacturing a cathode tip of electric field emission device
    9.
    发明授权
    Method for manufacturing a cathode tip of electric field emission device 有权
    电场发射装置的阴极尖端的制造方法

    公开(公告)号：US6069018A

    公开(公告)日：2000-05-30

    申请号：US141121

    申请日：1998-08-27

    申请人： Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    发明人： Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    IPC分类号： H01J17/49 ,  H01L21/00

    CPC分类号： H01J9/025 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/06341 ,  H01J2329/0415

    摘要： A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.

    摘要翻译： 制造电场发射器件的阴极尖端的方法包括依次在绝缘体衬底上沉积导电层和未掺杂的硅层; 在所述未掺杂的硅膜的顶部的选定区域上形成尖端掩模图案，并且各向同性地各向异性地蚀刻所述未掺杂的硅膜，从而使得硅膜形成为具有圆筒的锥形; 并且去除尖端掩模图案，将离子注入到蚀刻的硅层中并且使用湿蚀刻工艺去除离子注入的硅层。

    Cathode for field emission device
    10.
    发明授权
    Cathode for field emission device 失效
    场致发射装置阴极

    公开(公告)号：US06812635B2

    公开(公告)日：2004-11-02

    申请号：US10179739

    申请日：2002-06-24

    申请人： Young Rae Cho ,  Do Hyung Kim ,  Seong Deok Ahn ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    发明人： Young Rae Cho ,  Do Hyung Kim ,  Seong Deok Ahn ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    IPC分类号： H01J162

    CPC分类号： H01J1/3048 ,  H01J9/025 ,  Y10S977/939

    摘要： The present invention relates to a cathode for use in a field emission device. In a triode-type cathode for use in an electron emission device being a core component constituting a field emission device, the present invention includes forming a catalytic layer at the sidewall of a gate hole and then growing an emitter in the catalytic layer, thus uniformly distributing an electric field generated by a voltage applied to a gate electrode over the emitter. Therefore, the present invention can improve the brightness contrast at a low anode voltage and also can control electrons emitted from the emitter only with the gate voltage.

    摘要翻译： 本发明涉及用于场发射装置的阴极。 在作为构成场致发射器件的核心部件的电子发射器件中使用的三极管型阴极中，本发明包括在栅极孔的侧壁处形成催化剂层，然后在催化剂层中生长发射极，从而均匀地 分配由施加到发射极上的栅电极的电压产生的电场。 因此，本发明可以提高低阳极电压下的亮度对比度，并且还可以仅利用栅极电压来控制从发射极发射的电子。