公开(公告)号：US07687807B2

公开(公告)日：2010-03-30

申请号：US11834044

申请日：2007-08-06

申请人： Jae Bon Koo ,  Seong Hyun Kim ,  Kyung Soo Suh ,  Chan Hoe Ku ,  Sang Chul Lim ,  Jung Hun Lee

发明人： Jae Bon Koo ,  Seong Hyun Kim ,  Kyung Soo Suh ,  Chan Hoe Ku ,  Sang Chul Lim ,  Jung Hun Lee

IPC分类号： H01L31/00

CPC分类号： H01L27/281 ,  H01L27/283

摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.

摘要翻译： 提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。 通常，p型有机半导体是稳定的。 因此，当逆变器仅由p型半导体形成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E变换器更优选 的增强负载和增强驱动器。 然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。 为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且 提出了其制造方法。 根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

公开(公告)号：US08039295B2

公开(公告)日：2011-10-18

申请号：US12906457

申请日：2010-10-18

申请人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

发明人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0545

摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

公开(公告)号：US07842952B2

公开(公告)日：2010-11-30

申请号：US11931461

申请日：2007-10-31

申请人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

发明人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

IPC分类号： H01L31/00

CPC分类号： H01L27/283 ,  H01L51/0545

摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

公开(公告)号：US20110120866A1

公开(公告)日：2011-05-26

申请号：US12787806

申请日：2010-05-26

申请人： Su Jae LEE ,  Jin Ah Park ,  Jae Hyun Moon ,  Seong Hyun Kim ,  Tae Hyoung Zyung ,  Hye Yong Chu

发明人： Su Jae LEE ,  Jin Ah Park ,  Jae Hyun Moon ,  Seong Hyun Kim ,  Tae Hyoung Zyung ,  Hye Yong Chu

IPC分类号： G01N27/26 ,  B29C47/06

CPC分类号： G01N27/127

摘要： Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.

摘要翻译： 提供了一种环境气体传感器及其制造方法。 环境气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和在金属电极上彼此垂直布置不同种类的纳米纤维的感测层。 因此，环境气体传感器可以同时感测两种气体。

公开(公告)号：US20100159139A1

公开(公告)日：2010-06-24

申请号：US12542188

申请日：2009-08-17

申请人： Seong Hyun Kim ,  Sang Chul Lim ,  Yong Suk Yang ,  Zin Sig Kim ,  Doo Hyeb Youn

发明人： Seong Hyun Kim ,  Sang Chul Lim ,  Yong Suk Yang ,  Zin Sig Kim ,  Doo Hyeb Youn

IPC分类号： B05D1/36

CPC分类号： H01L51/0005

摘要： Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.

摘要翻译： 提供了使用在聚合物薄膜图案上将聚合物薄膜图案相比具有与聚合物薄膜图案相比具有大的表面能差异的另一种材料的现象形成聚合物薄膜的精细图案的方法。 可以应用具有大的表面能差异的两种聚合物材料，以容易且方便地形成微米级或亚微米级的聚合物薄膜的精细图案。

公开(公告)号：US07728327B2

公开(公告)日：2010-06-01

申请号：US11011878

申请日：2004-12-13

申请人： Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

发明人： Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC分类号： H01L29/04

CPC分类号： H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

摘要翻译： 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US06987290B2

公开(公告)日：2006-01-17

申请号：US10866274

申请日：2004-06-10

申请人： Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

发明人： Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC分类号： H01L39/16

CPC分类号： H01L45/00

摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

摘要翻译： 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US08212783B2

公开(公告)日：2012-07-03

申请号：US11930348

申请日：2007-10-31

申请人： Seong Hyun Kim ,  Yong Suk Yang ,  Jin Ho Lee

发明人： Seong Hyun Kim ,  Yong Suk Yang ,  Jin Ho Lee

IPC分类号： G06F3/041

CPC分类号： G06F3/016

摘要： Provided is a tactile and visual display device enabling visual information and tactile information to be simultaneously sensed. The tactile and visual display device includes: a display unit comprising a plurality of scan lines, a plurality of data lines and a plurality of pixels; a tactile sensation generator mounted over the display unit, transmitting light emitted from the pixels, comprising a transistor electrically connecting a plurality of corresponding pixels formed to correspond to the pixels with adjacent corresponding pixels, and generating an electrostatic force and a magnetostatic force; and a sensor in contact with the corresponding pixels to sense the generated electrostatic force or magnetostatic force. Accordingly, the texture of an image displayed on a display is provided as tactile information using an electrostatic force and a magnetostatic force, so that tactile information as well as visual information of the conventional display may be simultaneously provided.

摘要翻译： 提供了能够同时感测视觉信息和触觉信息的触觉和视觉显示装置。 触觉和视觉显示装置包括：显示单元，包括多条扫描线，多条数据线和多个像素; 触觉感觉发生器，其安装在所述显示单元上，透射从所述像素发射的光，所述触觉感觉发生器包括将形成为对应于所述像素的多个对应像素与相邻的相应像素电连接并产生静电力和静磁力的晶体管; 以及与相应的像素接触以感测所产生的静电力或静磁力的传感器。 因此，使用静电力和静磁力将显示器上显示的图像的纹理提供为触觉信息，从而可以同时提供触觉信息以及常规显示器的视觉信息。

公开(公告)号：US07884623B2

公开(公告)日：2011-02-08

申请号：US12181819

申请日：2008-07-29

申请人： Seong Hyun Kim ,  Yong Suk Yang ,  Sang Chul Lim ,  Zin Sig Kim ,  Yoon Ho Song

发明人： Seong Hyun Kim ,  Yong Suk Yang ,  Sang Chul Lim ,  Zin Sig Kim ,  Yoon Ho Song

IPC分类号： G01R27/26 ,  G01R27/08

CPC分类号： G01N27/414

摘要： Provided is a detector having a transistor or resistor structure. When an electrode is exposed to a detected solution, such as blood, a variation in current flowing through the detected solution may be greater than a variation in the electrical characteristics of the detector caused by a variation in the physical properties of semiconductor so that it is difficult to detect whether a bio-particle is contained in the detected solution. In order to solve this problem, a detection portion and an electrical measurement portion are separately formed, and the detection portion is processed with the bio-particle and then post-processed. Subsequently, the detection portion and the electrical measurement portion are bonded to each other using, for example, a laminating process, and the detector measures a detection value.

摘要翻译： 提供了具有晶体管或电阻器结构的检测器。 当电极暴露于检测到的溶液（例如血液）时，流经检测到的溶液的电流变化可能大于由半导体的物理性质的变化引起的检测器的电特性的变化， 难以检测检测到的溶液中是否含有生物粒子。 为了解决这个问题，分开形成检测部分和电测量部分，并且用生物粒子处理检测部分，然后进行后处理。 随后，使用例如层压处理将检测部分和电测量部分彼此接合，并且检测器测量检测值。

公开(公告)号：US20090146639A1

公开(公告)日：2009-06-11

申请号：US12181819

申请日：2008-07-29

申请人： Seong Hyun Kim ,  Yong Suk Yang ,  Sang Chul Lim ,  Zin Sig Kim ,  Yoon Ho Song

发明人： Seong Hyun Kim ,  Yong Suk Yang ,  Sang Chul Lim ,  Zin Sig Kim ,  Yoon Ho Song

IPC分类号： G01N27/00

CPC分类号： G01N27/414

摘要： Provided is a detector having a transistor or resistor structure. When an electrode is exposed to a detected solution, such as blood, a variation in current flowing through the detected solution may be greater than a variation in the electrical characteristics of the detector caused by a variation in the physical properties of semiconductor so that it is difficult to detect whether a bio-particle is contained in the detected solution. In order to solve this problem, a detection portion and an electrical measurement portion are separately formed, and the detection portion is processed with the bio-particle and then post-processed. Subsequently, the detection portion and the electrical measurement portion are bonded to each other using, for example, a laminating process, and the detector measures a detection value.

摘要翻译： 提供了具有晶体管或电阻器结构的检测器。 当电极暴露于检测到的溶液（例如血液）时，流经检测到的溶液的电流变化可能大于由半导体的物理性质的变化引起的检测器的电特性的变化， 难以检测检测到的溶液中是否含有生物粒子。 为了解决这个问题，分开形成检测部分和电测量部分，并且用生物粒子处理检测部分，然后进行后处理。 随后，使用例如层压处理将检测部分和电测量部分彼此接合，并且检测器测量检测值。