公开(公告)号：US5534231A

公开(公告)日：1996-07-09

申请号：US374404

申请日：1995-01-17

申请人： Stephen E. Savas

发明人： Stephen E. Savas

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  B01J8/00

CPC分类号： H01J37/321 ,  H01J37/32706

摘要： A plasma reactor with rf power inductively coupled into the reactor chamber to produce an rf magnetic field substantially perpendicular to a pedestal on which a wafer is placed for processing. Said pedestal is a powered electrode to which power is coupled to control the sheath voltage of the pedestal. This reactor is particularly suitable for soft etches and processes in which it is advantageous to couple much more power into ion production than into free radical production.

摘要翻译： 具有电感耦合到反应器室中的rf功率的等离子体反应器，以产生基本上垂直于其上放置晶片的基座的rf磁场用于处理。 所述基座是供电的电极，功率被耦合到其上以控制基座的护套电压。 该反应器特别适用于柔软的蚀刻和工艺，其中与将自由基生成相比，将更多的功率与离子生产相结合是有利的。

公开(公告)号：US5102496A

公开(公告)日：1992-04-07

申请号：US732425

申请日：1991-07-17

申请人： Stephen E. Savas

发明人： Stephen E. Savas

IPC分类号： C23C16/44 ,  C23C16/54 ,  H01J37/32

CPC分类号： H01J37/32431 ,  C23C16/4401 ,  C23C16/54 ,  H01J2237/022 ,  Y10S156/916

摘要： A method of preventing particulates from depositing onto a wafer during all periods that processing is not taking place including during all periods of wafer transfer into or out of a plasma reactor chamber. During all periods in which a wafer is within the reactor chamber, but is not being processed, a nonreactive auxiliary plasma is produced in the reactor chamber. This plasma charges the particulates and produces just above the surface of the wafer an electric field that repels the particulates from the wafer.

摘要翻译： 在所有期间内不会发生颗粒沉积到晶片上的方法，包括在晶片转入或离开等离子体反应室的所有周期期间。 在晶片在反应器室内但不被处理的所有时段期间，在反应器室中产生非反应性辅助等离子体。 该等离子体对微粒进行充电，并且在晶片表面上方产生排斥晶片上的微粒的电场。