公开(公告)号：US12100590B2

公开(公告)日：2024-09-24

申请号：US17603054

申请日：2020-02-07

Applicant: SUMCO CORPORATION

Inventor： Naoyuki Wada ,  Yu Minamide

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/458 ,  C23C16/54

CPC classification number: H01L21/0262 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/54

Abstract: Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier is cleaned at a predetermined frequency.

公开(公告)号：US12043899B2

公开(公告)日：2024-07-23

申请号：US17840960

申请日：2022-06-15

Applicant: ASM IP Holding B.V.

Inventor： Hyeongeu Kim ,  Tom Kirschenheiter ,  Eric Hill ,  Mark Hawkins ,  Loren Jacobs

IPC: C23C16/52 ,  C23C16/24 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/4586

Abstract: A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

公开(公告)号：US12006569B2

公开(公告)日：2024-06-11

申请号：US17437013

申请日：2020-03-11

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/44 ,  C23C16/448

CPC classification number: C23C16/305 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. In one embodiment, the transition metal oxide is molybdenum trioxide (MoO3), the chalcogen source is sulfur, the non-gaseous chalcogen scavenger is nickel and the transition metal dichalcogenide is molybdenum disulfide (MoS2). An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US20240158918A1

公开(公告)日：2024-05-16

申请号：US18237455

申请日：2023-08-24

Applicant: UNIVERSITIES SPACE RESEARCH ASSOCIATION

Inventor： Ramprasad Gandhiraman ,  Meyya Meyyappan ,  Jessica E. Koehne

IPC: C23C16/513 ,  B33Y10/00 ,  B33Y30/00 ,  C23C16/44 ,  C23C16/52 ,  H05H1/24 ,  H05H1/42

CPC classification number: C23C16/513 ,  B33Y10/00 ,  B33Y30/00 ,  C23C16/4401 ,  C23C16/52 ,  H05H1/2406 ,  H05H1/42 ,  H05H1/246

Abstract: Systems and methods for highly reproducible and focused plasma jet printing and patterning of materials using appropriate ink containing aerosol through nozzles with narrow orifice and tubes with controlled dielectric constant connected to high voltage power supply, in the presence of electric field and plasma, that enables morphological and/or bulk chemical modification and/or surface chemical modification of the material in the aerosol and/or the substrate prior to printing, during printing and post printing.

公开(公告)号：US11972957B2

公开(公告)日：2024-04-30

申请号：US16947422

申请日：2020-07-31

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Sheng-chun Yang ,  Chih-Lung Cheng ,  Yi-Ming Lin ,  Po-Chih Huang ,  Yu-Hsiang Juan ,  Xuan-Yang Zheng

IPC: C23C16/44 ,  C23C8/24 ,  C23C14/50 ,  C23C16/458 ,  F15D1/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67017 ,  C23C8/24 ,  C23C14/50 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4583 ,  C23C16/4586 ,  F15D1/025 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/6838

Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

公开(公告)号：US11929270B2

公开(公告)日：2024-03-12

申请号：US17744856

申请日：2022-05-16

Applicant: INFICON, Inc.

Inventor： Mohamed Buhary Rinzan ,  Chunhua Song ,  Steve James Lakeman

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  G01N29/02 ,  G01N29/036 ,  H01L21/285 ,  H01L21/66

CPC classification number: H01L21/67253 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/52 ,  G01N29/022 ,  G01N29/036 ,  H01L21/28556 ,  H01L22/26 ,  G01N2291/0255 ,  G01N2291/0256

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

公开(公告)号：US11906984B2

公开(公告)日：2024-02-20

申请号：US17454608

申请日：2021-11-11

Applicant: HORIBA STEC, Co., Ltd.

Inventor： Kotaro Takijiri ,  Ojiro Takamune

IPC: G05D11/13 ,  G05B17/02 ,  G01N21/3504 ,  C23C16/44 ,  C23C16/448

CPC classification number: G05D11/138 ,  C23C16/4401 ,  C23C16/448 ,  C23C16/4408 ,  G01N21/3504 ,  G05B17/02 ,  G05D11/132 ,  G05D11/135

Abstract: Provided is a concentration control system that has only a small time delay, obtains accurate estimated values, and also enables partial pressure control having improved responsiveness and accuracy. The system includes a flow rate control device provided on a supply flow path that supplies gas to a chamber, and controls a flow rate of a gas in the supply flow path to match a set flow rate, a partial pressure measurement device for a gas inside the chamber, an observer having a model which estimates a state of the gas inside the chamber, where a flow rate of the gas flowing into the chamber and measured partial pressures are input into the model, and an estimated partial pressure of the gas within the chamber is output, and a controller that, based on a set partial pressure and on the estimated partial pressure, sets the set flow rate.

公开(公告)号：US20230323532A1

公开(公告)日：2023-10-12

申请号：US18024045

申请日：2021-08-30

Applicant: Lam Research Corporation

Inventor： Keith Joseph Martin ,  Todd Schroeder ,  Kevin M. McLaughlin ,  Jiuyuan Nie ,  Jialing Yang ,  Chee Whye Woo

IPC: C23C16/44 ,  H01L21/687

CPC classification number: C23C16/4401 ,  H01L21/68771

Abstract: In some examples, a rib cover is provided for a multi-station processing module having a rib disposed between adjacent processing chambers. An example rib cover comprises a first portion for supporting the rib cover on the rib, a first side shield to cover a first wall of the rib when the rib cover is fitted thereto, and at least one spacer to hold an inner surface of the rib cover away from the covered rib.

公开(公告)号：US11725282B2

公开(公告)日：2023-08-15

申请号：US17445562

申请日：2021-08-20

Applicant: Novellus Systems, Inc.

Inventor： Chunguang Xia ,  Ramesh Chandrasekharan ,  Douglas Keil ,  Edward J. Augustyniak ,  Karl Frederick Leeser

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4558 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/45591 ,  C23C16/5096 ,  H01J37/3244

Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

公开(公告)号：US20180369881A1

公开(公告)日：2018-12-27

申请号：US15779894

申请日：2016-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: B08B9/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: B08B9/00 ,  B08B5/02 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/45589 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/68764

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).