公开(公告)号：US09865504B2

公开(公告)日：2018-01-09

申请号：US15061609

申请日：2016-03-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Yang Lee ,  Feng-Cheng Yang ,  Ting-Yeh Chen

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/08 ,  H01L21/308

CPC classification number: H01L21/823431 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823425 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure and a dielectric layer disposed on an upper surface of the isolation insulating layer. Both the first fin structure and the second fin structure are disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction. The first and second fin structures not covered by the gate structure are recessed below the upper surface of the isolation insulating layer. The source/drain structure is formed over the recessed first and second fin structures. A void is formed between the source/drain structure and the dielectric layer.

公开(公告)号：US09343575B1

公开(公告)日：2016-05-17

申请号：US14819602

申请日：2015-08-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Yang Lee ,  Ting-Yeh Chen ,  Chia-Ling Chan ,  Chien-Tai Chan

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7851 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/785

Abstract: A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin structure and a doped region in the fin structure and adjacent to the recess. The gate protrudes from the recess and across over the fin structure. The source-drain region is in the fin structure and adjacent to the doped region. Methods for forming the FinFET are also provided.