公开(公告)号：US20060163477A1

公开(公告)日：2006-07-27

申请号：US11314020

申请日：2005-12-22

申请人： Mari Nozoe ,  Yasunori Goto ,  Zhaohui Cheng

发明人： Mari Nozoe ,  Yasunori Goto ,  Zhaohui Cheng

IPC分类号： G21K7/00

CPC分类号： H01J37/026 ,  G01R31/307 ,  H01J37/04 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/24592 ,  H01J2237/2817

摘要： When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.

摘要翻译： 当晶片上方的电荷控制电极的电极电位降低时，图像亮度降低。 图像亮度的变化点是图像的带正电状态和图像的带负电状态之间的切换点，显示图像的弱电状态。 通过将该变化点设定为检查条件，可以减少晶片表面上的电荷量，并且可以进行稳定的晶片检查。 估计图1中的施加电压V 1。 14对应于变化点，并且大致包括在由施加电压V 1附近的由虚线包围的区域的电压范围内。 在该电压范围内，可以减少充电对检查条件下的检查的影响。

公开(公告)号：US20050099189A1

公开(公告)日：2005-05-12

申请号：US10620702

申请日：2003-07-17

申请人： Zhaohui Cheng ,  Mari Nozoe

发明人： Zhaohui Cheng ,  Mari Nozoe

IPC分类号： H01L21/66 ,  G01N23/00 ,  G01R31/302 ,  G01R31/305 ,  G06T1/00 ,  H01J37/04 ,  H01J37/147 ,  H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/2817

摘要： A pattern inspecting technique, depending on the kind of materials, can reduce damage including shrinkage to materials when the materials are prone to such damage as shrinkage and spoilage caused by electron beam irradiation. This is accomplished by scanning a sample with a primary electron beam, detecting secondary electrons generated, or electrons reflected from the semiconductor device, or both the former and latter electrons, and converting the electrons into signals, and transforming the signals into an image, displaying the image, and detecting defective spots in the circuit pattern of the sample. The irradiation density (dose per unit area) of the electron beam is monitored and limited depending on the kind of material of the circuit pattern under inspection and the inspecting conditions, and damage, such as shrinkage and spoilage to the materials during electron beam irradiation, is reduced to an allowable range.