公开(公告)号：US11915902B2

公开(公告)日：2024-02-27

申请号：US17627294

申请日：2020-06-29

申请人： NuFlare Technology, Inc.

发明人： Atsushi Ando ,  Kazuhiko Inoue

IPC分类号： H01J37/153 ,  H01J37/147 ,  H01J37/21 ,  G01R31/307

CPC分类号： H01J37/153 ,  G01R31/307 ,  H01J37/147 ,  H01J37/21 ,  H01J2237/1534 ,  H01J2237/24592

摘要： A conduction inspection method for a multipole aberration corrector according to one aspect of the present invention includes applying, in a state where a predetermined potential has been applied to each shield electrode, an inspection charged particle beam to pass through a first opening, a second opening, and a third opening, using a multipole aberration corrector which includes an upper-stage substrate where the first opening is formed and a shield electrode is arranged around the first opening, a middle-stage substrate where the second opening is formed, a plurality of control electrodes are disposed to be opposite each other across the second opening, and a plurality of wirings are arranged to be individually connected to one of the plurality of control electrodes which are different from each other, and a lower-stage substrate where the third opening is formed and a shield electrode is arranged around the third opening, and which corrects aberration of a correction charged particle beam passing through the first opening, the second opening, and the third opening by individually variably applying a potential to each of the plurality of control electrodes; measuring, via a wiring individually connected to each control electrode of the plurality of control electrodes in the plurality of wirings, an inflow electron dose of electrons, into each control electrode of the plurality of control electrodes, which are secondarily emitted because the inspection charged particle beam has passed through the first opening, the second opening, and the third opening and has irradiated an object disposed at the downstream side of the lower-stage substrate; and determining individually, for each control electrode, whether there is conduction between a control electrode concerned and a wiring connected to the control electrode concerned, based on a result of measuring the inflow electron dose into each control electrode.

公开(公告)号：US20230243766A1

公开(公告)日：2023-08-03

申请号：US18002937

申请日：2021-06-28

申请人： COZAI LTD

发明人： Hagai COHEN

IPC分类号： G01N23/2251 ,  G01R31/307

CPC分类号： G01N23/2251 ,  G01R31/307

摘要： A measurement system includes: an excitation system; a detector; and a control unit. The excitation system includes excitation sources generating excitations of different types comprising: a high energy electromagnetic radiation source; at least one electric power supply providing a bias voltage to a sample; and at least one electron beam source generating relatively low energy e-radiation in the form of an electron beam. The excitation system includes first and second sequentially performed measurement modes, for respectively, exciting the sample by the high energy radiation to induce a first-mode secondary electron emission spectral response, and supplying initial bias voltage to the sample and exciting the sample with the e-radiation followed by a gradual variation of the bias voltage from said initial bias voltage to induce a second-mode electric current variations in the sample. The detector detects said first-mode secondary electron emission spectral response and generates first-mode measured data, and monitors the electric current through the sample and generates second-mode measured data indicative of sample current readout.

公开(公告)号：US20180182676A1

公开(公告)日：2018-06-28

申请号：US15851357

申请日：2017-12-21

申请人： FEI Company

发明人： Thomas G. Miller

IPC分类号： H01L21/66 ,  G01R31/28 ,  G01R31/307

CPC分类号： H01L22/12 ,  G01R31/2831 ,  G01R31/307

摘要： A system for analyzing defects comprises determining coordinates of a defect using a wafer inspection tool; identifying a structure of interest near the defect coordinates; directing a focused ion beam toward the wafer to expose the structure of interest; and forming an image of the exposed structure of interest, wherein the focused ion beam is directed to the mill at a location corresponding to the identified structure of interest rather than at the coordinates of the defect.

公开(公告)号：US09964589B1

公开(公告)日：2018-05-08

申请号：US15346025

申请日：2016-11-08

申请人： Globalfoundries Singapore Pte. Ltd.

发明人： Lei Zhu ,  Pik Kee Tan ,  Zhihong Mai ,  Huei Hao Yap ,  Jeffrey Chor-Keung Lam

IPC分类号： G01R31/02 ,  G01R31/311 ,  G01R31/307 ,  G01R31/28

CPC分类号： G01R31/311 ,  G01R31/2894 ,  G01R31/307

摘要： A system for detection of a photon emission generate by a device of an integrated circuit, and methods for detecting the same are provided. The system includes a device space configured to include the device. The system further includes an electrical probe proximate the device space and configured to couple to the device. The electrical probe is configured to induce the device to generate the photon emission. The system further includes an optical fiber having a first end proximate the device space and a second end spaced from the first end. The first end is configured to receive the photon emission generated by the device. The optical fiber is configured to transmit the photon emission from the first end to the second end. The system further includes a detector in communication with the second end of the optical fiber and configured to detect the photon emission transmitted by the optical fiber.

公开(公告)号：US20160306009A1

公开(公告)日：2016-10-20

申请号：US14689088

申请日：2015-04-17

申请人： GLOBALFOUNDRIES Inc.

发明人： Weihong GAO ,  Xuefeng ZENG ,  Yan PAN ,  Peter LIN ,  Hoang NGUYEN ,  Ho Young SONG

IPC分类号： G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307

摘要： A method and apparatus for separating real DVC via defects from nuisance based on Net Tracing Classification of eBeam VC die comparison inspection results are provided. Embodiments include performing an eBeam VC die comparison inspection on each via of a plurality of dies; determining DVC vias based on the comparison; performing a Net Tracing Classification on the DVC vias; determining S/D DVC vias based on the Net Tracing Classification; and performing a die repeater analysis on the S/D DVC vias to determine systematic design-related DVC via defects.

摘要翻译： 提供了一种基于eBeam VC跟踪分类的虚拟DV模块比较检查结果，通过缺陷与真实DVC分离真实DVC的方法和装置。 实施例包括对多个管芯的每个通孔执行eBeam VC管芯比较检查; 根据比较确定DVC通孔; 对DVC通道进行净跟踪分类; 根据网络跟踪分类确定S / D DVC通道; 并对S / D DVC通孔进行芯片中继器分析，以通过缺陷确定与系统设计相关的DVC。

公开(公告)号：US20160266191A1

公开(公告)日：2016-09-15

申请号：US14840330

申请日：2015-08-31

申请人： Kabushiki Kaisha Toshiba

发明人： Motoki KADOWAKI

IPC分类号： G01R31/08 ,  G01R31/02 ,  G01R31/04

CPC分类号： G01R31/307 ,  H01L22/12

摘要： In accordance with an embodiment, an inspection apparatus includes a detecting part and a control part. The detecting part detects a signal generated from a first layer including a wiring line or a contact due to application of an energy beam to the first layer. The control part sets an inspection area on the basis of a position of the wiring line or the contact that may be a defect in the first layer obtained by the signal and of information indicating an electric connection destination of the wiring line or the contact that may be the defect. The set inspection area includes a wiring line or a contact in a second layer different from the first layer. The second layer is electrically connected to the wiring line or the contact that may be the defect in the first layer.

摘要翻译： 根据实施例，检查装置包括检测部和控制部。 检测部分检测由包含能量束到第一层的布线或接触的第一层产生的信号。 控制部根据通过该信号获得的布线或可能是第一层中的缺陷的接触点的位置和指示布线的电连接目的地的信息或者可能的接触点 成为缺陷。 设置检查区域包括与第一层不同的第二层中的布线或接触。 第二层电连接到可能是第一层中的缺陷的布线或接触。

公开(公告)号：US09423452B2

公开(公告)日：2016-08-23

申请号：US14095389

申请日：2013-12-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Bo-Jr Huang ,  Nan-Hsin Tseng ,  Yen-Ling Liu

IPC分类号： G01R31/305 ,  G01R31/307 ,  G01R31/302 ,  G01R1/07

CPC分类号： G01R31/307 ,  G01R1/07 ,  G01R31/3025

摘要： A method for performing contactless signal testing includes receiving, with a testing pad of an integrated circuit, a signal within an electron beam, converting an electrical current created by the e-beam to a voltage with a number of diodes connected to a positive voltage supply, extracting a digital test signal from the voltage signal with a digital inverter, and passing the test signal to digital circuitry within the integrated circuit.

摘要翻译： 用于执行非接触信号测试的方法包括：利用集成电路的测试焊盘接收电子束内的信号，将由电子束产生的电流转换为具有连接到正电压源的多个二极管的电压 用数字逆变器从电压信号提取数字测试信号，并将测试信号传递到集成电路内的数字电路。

公开(公告)号：US20160041201A1

公开(公告)日：2016-02-11

申请号：US14456827

申请日：2014-08-11

申请人： MACRONIX International Co., Ltd.

发明人： Che-Lun Hung ,  Hsiao-Leng Li

IPC分类号： G01R1/07 ,  G01R31/28

CPC分类号： G01R31/307 ,  G01R31/026 ,  G01R31/2884

摘要： A die structure is described, including a device area and a contact test area. The device area has therein a device structure including a first contact plug. The contact test area has therein a contact test structure that includes a second contact plug and is different from the device structure. The contact test structure is also described, including a well, a heavily doped region in the well, and a contact plug, wherein the heavily doped region and the well are both of N-type or are both of P-type, and the contact plug is disposed over the heavily doped region.

摘要翻译： 描述了一种模具结构，包括设备区域和接触测试区域。 装置区域具有包括第一接触插塞的装置结构。 接触测试区域具有包括第二接触插塞并且与器件结构不同的接触测试结构。 还描述了接触测试结构，包括阱，阱中的重掺杂区域和接触插塞，其中重掺杂区域和阱都是N型或都是P型，并且接触 插头设置在重掺杂区域上。

公开(公告)号：US20150260784A1

公开(公告)日：2015-09-17

申请号：US14432712

申请日：2013-10-04

申请人： FEI COMPANY

发明人： Jeffrey Blackwood ,  Sang Hoon Lee ,  Michael Schmidt ,  Stacey Stone ,  Karey Holland

IPC分类号： G01R31/265 ,  H01J37/153

CPC分类号： G01R31/2653 ,  G01N1/286 ,  G01N1/32 ,  G01R31/2808 ,  G01R31/2898 ,  G01R31/307 ,  G01R31/312 ,  H01J37/153 ,  H01J37/3005 ,  H01J2237/208 ,  H01J2237/24564 ,  H01J2237/2817 ,  H01J2237/31749 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region.

摘要翻译： 样品中的多个平面从单个角度暴露出来，用于通过电探针进行接触。 样品可以以非正交角度研磨，以将不同的层暴露于倾斜的表面。 多个平行导体平面的倾斜边缘可从上方进入多个层次。 例如，可以访问平面，以便与用于施加或感测电压的电探针接触。 可以例如通过从样品表面倒下暴露的层来鉴定待接触的暴露层的水平，因为非正交磨机使得所有层从上方可见。 或者，样品可以与表面正交地研磨，然后倾斜和/或旋转以提供对该装置的多个级别的访问。 铣削优选地远离感兴趣的区域进行，以提供对该区域的电通路，同时使对该区域的损害最小化。

公开(公告)号：US20150004723A1

公开(公告)日：2015-01-01

申请号：US14142584

申请日：2013-12-27

申请人： SHANGHAI HUALI MICROELECTRONICS CORPORATION

发明人： Rongwei FAN ,  Hunglin CHEN ,  Yin LONG ,  Qiliang NI

IPC分类号： H01L21/66

CPC分类号： H01L22/14 ,  G01R31/307 ,  H01L22/12 ,  H01L22/30 ,  H01L22/34

摘要： A method of inspecting misalignment of a polysilicon gate is disclosed, characterized in forming only NMOS devices in P-wells in a test wafer and utilizing an advanced electron beam inspection tool operating with a positive mode to carry out electrical defect inspection. The method can be applied in precisely figuring out the in-plane misalignment of the polysilicon gates of an in-process semiconductor product and identifying a misalignment tendency therebetween across a wafer by verifying all locations of interest thereon, thus providing a methodology for process window optimization and on-line monitoring and contributing to the manufacturing process and yield improvement.

摘要翻译： 公开了一种检查多晶硅栅极未对准的方法，其特征在于在测试晶片中仅在P阱中形成NMOS器件，并利用以正模式工作的先进电子束检查工具进行电气缺陷检查。 该方法可以应用于精确地计算过程中半导体产品的多晶硅栅极的面内未对准，并通过验证其上感兴趣的所有位置来识别晶片之间的偏移趋势，从而提供了用于处理窗口优化的方法 并在线监测并有助于制造过程和产量的提高。