NEAR-END CROSSTALK NOISE MINIMIZATION AND POWER REDUCTION FOR DIGITAL SUBSCRIBER LOOPS
    31.
    发明申请
    NEAR-END CROSSTALK NOISE MINIMIZATION AND POWER REDUCTION FOR DIGITAL SUBSCRIBER LOOPS 有权
    数字订阅者机身的近端最小化噪声最小化和功耗降低

    公开(公告)号:US20110129005A1

    公开(公告)日:2011-06-02

    申请号:US13020120

    申请日:2011-02-03

    Applicant: Xianbin Wang

    Inventor: Xianbin Wang

    Abstract: To optimize the performance of DSL modems in the same cable bundle, the size and position of the group of subcarriers used for transmission is intelligently selected when the bit rate necessary for making the transmission is less than the total available bandwidth provided by all subcarriers. By intelligently selecting a minimum number of subcarriers for Digital Multi-tone (DMT) signal transmission, a reduction in line driver power consumption is effectuated. Additionally, by intelligently selecting the position of the groups of subcarriers within the total available subcarriers, near-end crosstalk (NEXT) noise within the cable bundle may be minimized.

    Abstract translation: 为了优化同一电缆束中的DSL调制解调器的性能,当进行传输所需的比特率小于由所有子载波提供的总可用带宽时,用于传输的子载波组的大小和位置被智能地选择。 通过智能地选择用于数字多音(DMT)信号传输的最小数量的子载波,实现了线路驱动器功耗的降低。 另外,通过智能地选择总可用子载波内的子载波组的位置,电缆束内的近端串扰(NEXT)噪声可以被最小化。

    Integrated circuit processing system
    32.
    发明授权
    Integrated circuit processing system 有权
    集成电路处理系统

    公开(公告)号:US07749894B2

    公开(公告)日:2010-07-06

    申请号:US11558342

    申请日:2006-11-09

    Abstract: An integrated circuit processing system is provided including providing a substrate having an integrated circuit, forming an interconnect layer over the integrated circuit, applying a low-K dielectric layer over the interconnect layer, applying an ultra low-K dielectric layer over the low-K dielectric layer, forming an opening through the ultra low-K dielectric layer and the low-K dielectric layer to the interconnect layer, depositing an interconnect metal in the opening, and chemical-mechanical polishing the interconnect metal and the ultra low-K dielectric layer.

    Abstract translation: 提供一种集成电路处理系统,包括提供具有集成电路的衬底,在集成电路上形成互连层,在互连层上施加低K电介质层,在低K电介质层上施加超低K电介质层 电介质层,通过超低K电介质层和低K电介质层形成开口到互连层,在开口中沉积互连金属,并对互连金属和超低K电介质层进行化学机械抛光 。

    Multi-symbol encapsulated OFDM system
    33.
    发明授权
    Multi-symbol encapsulated OFDM system 失效
    多码封装OFDM系统

    公开(公告)号:US07606138B2

    公开(公告)日:2009-10-20

    申请号:US10951761

    申请日:2004-09-29

    CPC classification number: H04L27/2607 H04L2025/03414 H04L2025/03522

    Abstract: A method and system for communication of information in OFDM format are disclosed. The method employs multi-symbol encapsulation (MSE), wherein multiple OFDM symbols are grouped together in cyclic frames having a single cyclic guard portion, for example a cyclic prefix, with multiple OFDM symbols sandwiched between each two consecutive cyclic guard portions. All OFDM symbols of one frame are equalized together at the receiver in a frequency domain using a single DFT/IDFT operation sequence. Embodiments of the MSE OFDM system are disclosed enabling high bandwidth efficiency, high tolerance to carrier frequency offset and low peak-to-average power ratio.

    Abstract translation: 公开了一种以OFDM格式进行信息通信的方法和系统。 该方法采用多符号封装(MSE),其中多个OFDM符号被分组在具有单个循环保护部分的循环帧中,例如循环前缀,其中多个OFDM符号被夹在每两个连续循环保护部分之间。 使用单个DFT / IDFT操作序列,一个帧的所有OFDM符号在接收机处一起在频域上均衡。 公开了MSE OFDM系统的实施例,其实现了高带宽效率,对载波频率偏移的高容差以及低峰值与平均功率比。

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