Abstract:
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
Abstract:
The present invention provides an electron emitting device comprising: a pair of conductors opposed to each other on a substrate; and a pair of deposition films having carbon as a main component which are respectively connected to the pair of conductors and disposed with a gap therebetween. The deposition film contains sulfur in a range of not less than 1 mol % and not more than 5 mol % as a ratio to carbon.
Abstract:
An electron-emitting device comprises a pair of electrodes arranged on a substrate and an electroconductive film connecting said electrodes and having an electron-emitting region formed therein. The electron-emitting region contains a fissure having an even width of less than 50 nm and preferably shows a voltage applicable length of less than 5 nm. An electron source comprising a plurality of such electron-emitting devices is capable of realizing uniform electron beam emission and an image-forming apparatus comprising such an electron source is suitable for high resolution image display.
Abstract:
An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
Abstract:
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1&mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
Abstract:
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.