公开(公告)号：US4214254A

公开(公告)日：1980-07-22

申请号：US882332

申请日：1978-03-01

申请人： Shin Kimura ,  Hiroshi Fukui ,  Yoshio Terasawa

发明人： Shin Kimura ,  Hiroshi Fukui ,  Yoshio Terasawa

IPC分类号： H01L29/74

CPC分类号： H01L29/7428

摘要： A semiconductor controlled rectifier comprising an auxiliary thyristor region turned on by a gating signal and a main thyristor region turned on by being gated by the turn-on current flowing through the auxiliary thyristor region, wherein the life time of carriers in the auxiliary thyristor region is made shorter than that of the carriers in the main thyristor region.

摘要翻译： 一种半导体可控整流器，包括通过门控信号导通的辅助晶闸管区域和通过流经辅助晶闸管区域的导通电流而导通的主晶闸管区域，其中辅助晶闸管区域中的载流子的寿命为 比主晶闸管区域的载流子短。

公开(公告)号：US4063270A

公开(公告)日：1977-12-13

申请号：US687745

申请日：1976-05-18

申请人： Shin Kimura ,  Yoshio Terasawa

发明人： Shin Kimura ,  Yoshio Terasawa

IPC分类号： H01L29/74

CPC分类号： H01L29/7428

摘要： A semiconductor controlled rectifier device comprises a semiconductor substrate consisting of a plurality of layers of alternately different conductivity types, in which the outermost layer exposed at one of the principal surfaces is divided into a first portion providing a main thyristor, and a second portion having an area smaller than that of the first portion and providing an auxiliary thyristor. In the device, the second portion of the outermost layer of the substrate comprises a first region participating in the turn-on of the device, and a second region acting to increase the minimum gate current necessary to turn on the device, thereby increasing the minimum gate current necessary to turn on the auxiliary thyristor without appreciably increasing the gate current required for turning on the auxiliary thyristor and without reducing the switching power capability of the device, so that mal-firing due to noise current induced between the gate and the cathode can be prevented.

摘要翻译： 半导体可控整流器件包括由交替不同导电类型的多个层组成的半导体衬底，其中在一个主表面上露出的最外层被分成提供主晶闸管的第一部分，以及具有 面积小于第一部分的面积，并提供辅助晶闸管。 在器件中，衬底的最外层的第二部分包括参与器件接通的第一区域和用于增加开启器件所需的最小栅极电流的第二区域，从而增加最小值 导通辅助晶闸管所需的栅极电流，而不会明显增加导通辅助晶闸管所需的栅极电流，并且不降低器件的开关功率能力，从而在栅极和阴极之间引起的噪声电流引起的不良点火 被阻止

公开(公告)号：US3990090A

公开(公告)日：1976-11-02

申请号：US460479

申请日：1974-04-12

申请人： Yoshio Terasawa ,  Shin Kimura

发明人： Yoshio Terasawa ,  Shin Kimura

IPC分类号： H01L29/74 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L29/102 ,  H01L29/41716 ,  H01L29/42308

摘要： A semiconductor controlled rectifier comprising a semiconductor substrate of four-layer structure consisting of alternate P and N layers; a pair of main electrodes kept in ohmic contact with the exposed surfaces of outermost P and N layers; a gate electrode kept in contact with the surface of an intermediate layer; and an auxiliary electrode disposed on the surface of the intermediate layer, which is separated from the gate electrode, lies opposite to the main electrode with respect to the gate electrode, and has a portion located near the main electrode.

摘要翻译： 一种半导体可控整流器，包括由交替的P和N层组成的四层结构的半导体衬底; 一对主电极与最外面的P层和N层的暴露表面保持欧姆接触; 栅电极与中间层的表面保持接触; 并且配置在与栅电极分离的中间层的表面上的辅助电极与主电极相对于栅电极相对，并且具有位于主电极附近的部分。