公开(公告)号：US5578897A

公开(公告)日：1996-11-26

申请号：US404958

申请日：1995-03-16

Applicant: Ichiro Nomura ,  Yoshikazu Banno ,  Tetsuya Kaneko ,  Toshihiko Takeda ,  Kumi Iwai

Inventor： Ichiro Nomura ,  Yoshikazu Banno ,  Tetsuya Kaneko ,  Toshihiko Takeda ,  Kumi Iwai

IPC: H01J1/316 ,  H01J1/00

CPC classification number: H01J1/316 ,  H01J2201/3165 ,  H01J2329/00

Abstract: A multi-electron source has a plurality of electron emitting portions arranged on a substrate. Each electron emitting portion comprises a conductive film containing a crack with an average width of 0.05 .mu.m to 1 .mu.m. The electron emitting portions are prepared by subjecting conductive films, preferably of fine particles, to a pulse voltage application treatment.

公开(公告)号：US5559342A

公开(公告)日：1996-09-24

申请号：US418091

申请日：1995-04-06

Applicant: Takeo Tsukamoto ,  Akira Shimizu ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Takeo Tsukamoto ,  Akira Shimizu ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01J1/14 ,  H01J1/316 ,  H01J9/04 ,  H01J19/24 ,  H01L29/12

CPC classification number: H01J1/316 ,  H01J1/14 ,  H01J9/042 ,  H01J2201/3165

Abstract: An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.

Abstract translation: 电子发射器件通过粗电阻膜中的电流源引起电子发射。 粗糙的薄电阻膜至少由粗的薄膜构成。

公开(公告)号：US5455597A

公开(公告)日：1995-10-03

申请号：US172060

申请日：1993-12-23

Applicant: Naoto Nakamura ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yasue Sato

Inventor： Naoto Nakamura ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yasue Sato

IPC: H01J1/316 ,  H01J31/12 ,  G09G3/22

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: An image-forming apparatus is comprised of a substrate, an electron-emitting device which is provided on the substrate and includes an electron-emitting region between electrodes and emits electrons on application of voltage between the electrodes, and an image-forming member which forms an image on irradiation of an electron beam. A diameter S.sub.1 of the electron beam on the image-forming member in direction of application of the voltage between the electrodes is given by Equation (I):S.sub.1 =K.sub.1 .multidot.2d(V.sub.f /V.sub.a).sup.1/2 (I)where K.sub.1 is a constant and 0.8.ltoreq.K.sub.1 .ltoreq.1.0, d is a distance between the substrate and the image-forming member, V.sub.f is a voltage applied between the electrodes, and V.sub.a is a voltage applied to the image-forming member. A method for designing a diameter of an electron beam at an image-forming member face of the image-forming apparatus is comprised of a diameter S.sub.1 the electron beam at the image-forming member face in a direction of application of the voltage between the electrodes designed so as to satisfy the equation (I).

Abstract translation: 一种图像形成装置包括一基板，一电子发射装置，该电子发射装置设置在该基板上，并且包括电极之间的电子发射区域，并且在该电极之间施加电压而发射电子;以及图像形成部件，其形成 照射电子束的图像。 在电极之间施加电压方向上的图像形成部件上的电子束的直径S1由等式（I）给出：S1 = K1x2d（Vf / Va）1/2（I）其中K1是常数 并且0.8≤Ki≤1.0，d是衬底和图像形成构件之间的距离，Vf是施加在电极之间的电压，Va是施加到图像形成构件的电压。 用于设计图像形成装置的图像形成构件面处的电子束的直径的方法包括直径S1，图像形成构件的电子束在施加电极之间的电压方向上面对 设计为满足等式（I）。

公开(公告)号：US5155416A

公开(公告)日：1992-10-13

申请号：US254150

申请日：1988-10-06

Applicant: Hidetoshi Suzuki ,  Ichiro Nomura ,  Tetsuya Kaneko ,  Toshihiko Takeda ,  Yoshikazu Banno ,  Kojiro Yokono

Inventor： Hidetoshi Suzuki ,  Ichiro Nomura ,  Tetsuya Kaneko ,  Toshihiko Takeda ,  Yoshikazu Banno ,  Kojiro Yokono

IPC: G09G1/20 ,  H01J1/316 ,  H01J3/30 ,  H01J29/04 ,  H01J29/74 ,  H01J31/12 ,  H01J31/15

CPC classification number: B82Y10/00 ,  H01J1/316 ,  H01J31/127 ,  H01J31/15 ,  H01J2201/3165

Abstract: An electron beam emitting device, includes a surface conduction type of thin film device having an electron emitting area and at least a pair of electrodes for passing current through the electron emitting area, and a voltage applicator for applying a voltage independently on each of the electrodes, the voltage applicator applying a voltage on each electrode so that each of the electrodes may become higher or lower in potential relative to the other electrode.