公开(公告)号：US20150021704A1

公开(公告)日：2015-01-22

申请号：US13944403

申请日：2013-07-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hui Zang ,  Hoon Kim

IPC: H01L21/28 ,  H01L29/49

CPC classification number: H01L27/0922 ,  H01L21/28088 ,  H01L27/0924 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66795

Abstract: An improved method and structure for fabrication of replacement metal gate (RMG) field effect transistors is disclosed. P-type field effect transistor (PFET) gate cavities are protected while N work function metals are deposited in N-type field effect transistor (NFET) gate cavities.

Abstract translation: 公开了用于制造替代金属栅极（RMG）场效应晶体管的改进的方法和结构。 P型场效应晶体管（PFET）栅极腔被保护，而N型功能金属沉积在N型场效应晶体管（NFET）栅极腔中。