公开(公告)号：US20100024871A1

公开(公告)日：2010-02-04

申请号：US12399441

申请日：2009-03-06

Applicant: Min-Seok Oh ,  Min Park ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo

Inventor： Min-Seok Oh ,  Min Park ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo

IPC: H01L31/00 ,  H01L21/302

CPC classification number: H01L31/035281 ,  H01L31/02363 ,  Y02E10/50

Abstract: A method of manufacturing a photovoltaic device includes preparing a semiconductor substrate having a light incidence surface receiving light and including single crystalline silicon, wet-etching the light incidence surface to form a plurality of first protrusions on the light incidence surface, dry etching a plurality of surfaces of the first protrusions to form a plurality of second protrusions on the plurality of surfaces of the first protrusions, and forming a semiconductor layer on the light incidence surface. The method further includes forming a first electrode on the semiconductor layer and forming a second electrode on a rear surface of the semiconductor substrate facing the light incidence surface.

Abstract translation: 一种制造光伏器件的方法包括：制备具有光入射表面并包含单晶硅的半导体衬底，湿式蚀刻光入射表面以在光入射表面上形成多个第一突起，干蚀刻多个 所述第一突起的表面在所述第一突起的多个表面上形成多个第二突起，并且在所述光入射表面上形成半导体层。 该方法还包括在半导体层上形成第一电极，并在与半导体衬底相对的光入射面的后表面上形成第二电极。

公开(公告)号：US20090242881A1

公开(公告)日：2009-10-01

申请号：US12197573

申请日：2008-08-25

Applicant: Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

Inventor： Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

IPC: H01L33/00

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

Abstract translation: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。