公开(公告)号：US20240322050A1

公开(公告)日：2024-09-26

申请号：US18595223

申请日：2024-03-04

Applicant: CASIO COMPUTER CO., LTD.

Inventor： Yuta SAITO

IPC: H01L31/02 ,  G04B19/04 ,  G04C10/02 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/05

CPC classification number: H01L31/02013 ,  G04B19/04 ,  G04C10/02 ,  H01L31/02167 ,  H01L31/0504 ,  H01L31/035281

Abstract: Disclosed is an electronic device including: a solar cell including a power generation layer and a pair of electrodes that sandwich the power generation layer; and a coat that has a second face attached to at least part of a first face of the solar cell. The coat includes extraction wirings that are located on the second face and electrically connected to the electrodes.

公开(公告)号：US12092778B2

公开(公告)日：2024-09-17

申请号：US17270101

申请日：2019-08-21

Applicant: Kansas State University Research Foundation

Inventor： Amir Bahadori ,  Zayd Leseman

IPC: G01T3/08 ,  H01L27/144 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/117

CPC classification number: G01T3/085 ,  H01L27/1446 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/117

Abstract: An isotropic neutron detector includes a spherical secondary particle radiator component and a plurality of stacked semiconductor detectors. A first semiconductor detector is coupled to at least a portion of the spherical secondary particle radiator component, forming a portion of a first concentric shell thereover. A second semiconductor detector coupled to at least a portion of the first semiconductor detector, forming a portion of a second concentric shell thereover.

公开(公告)号：US20240274729A1

公开(公告)日：2024-08-15

申请号：US18645370

申请日：2024-04-25

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang CHEN ,  Wenli XU ,  Kaifu QIU ,  Yongqian WANG ,  Xinqiang YANG

IPC: H01L31/0216 ,  H01L31/0236 ,  H01L31/0352

CPC classification number: H01L31/02167 ,  H01L31/02363 ,  H01L31/035281

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

公开(公告)号：US12046689B2

公开(公告)日：2024-07-23

申请号：US18361485

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chan-Hong Chern

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/035254 ,  H01L31/022408 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/1804

Abstract: A photodetector is provided. The photodetector includes a cathode electrode in a semiconductor layer, a light absorption material at least partially embedded in the semiconductor layer, an anode electrode over the light absorption material, and a lower buffer layer electrically connecting between the cathode electrode and the light absorption material. The lower buffer layer includes first SiGe layers vertically stacked and spaced apart from each other, and atomic percentages of germanium in the first SiGe layers increase in order as a level of a first SiGe layer increases from bottom to top.

公开(公告)号：US20240243209A1

公开(公告)日：2024-07-18

申请号：US18623707

申请日：2024-04-01

Applicant: Waymo LLC

Inventor： Caner Onal ,  Simon Verghese ,  Pierre-Yves Droz

IPC: H01L31/0352 ,  G01S7/486 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/144 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/035272 ,  G01S17/89 ,  H01L27/1443 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/186 ,  G01S7/4863 ,  G01S7/4868

Abstract: Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

公开(公告)号：US20240213389A1

公开(公告)日：2024-06-27

申请号：US18127423

申请日：2023-03-28

Applicant: Lumentum Operations LLC

Inventor： Takashi TOYONAKA ,  Hiroshi HAMADA ,  Ryu WASHINO ,  Shigetaka HAMADA ,  Suguru KATO

IPC: H01L31/105 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/035281

Abstract: A semiconductor photodetector includes a substrate; a mesa structure on the substrate, the mesa structure being composed of some layers including an upper layer and a lower layer, the upper layer being an absorption layer of light, the lower layer being a wide bandgap layer with a bandgap wide enough not to absorb the light; and an insulating film covering a side of the mesa structure, each of the layers comprising single crystals of III-V semiconductors and having a top of a (100) plane, the top of the wide bandgap layer having a shape including a pair of vertices, in [0-11] and [01-1] directions, on a circumference of a minimum bounding circle.

公开(公告)号：US20240186434A1

公开(公告)日：2024-06-06

申请号：US18553065

申请日：2021-04-09

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Shoko Tatsumi ,  Yasuhiko Nakanishi ,  Masahiro Nada

IPC: H01L31/0352 ,  H01L31/0216 ,  H01L31/054

CPC classification number: H01L31/035281 ,  H01L31/02161 ,  H01L31/0547

Abstract: In a light receiving element, a first semiconductor layer that is formed on the upper surface of a substrate and is formed with a semiconductor of a first conductivity type, a light absorbing layer formed with a semiconductor, a second semiconductor layer formed with a semiconductor of a second conductivity type, a first electrode that is formed in contact with the second semiconductor layer, is formed with a metal, and functions as a reflective film, and a second electrode formed on the first semiconductor layer are formed in a vertical direction on the upper surface of the substrate. In the light receiving element, a slope that is neither perpendicular nor parallel to the substrate plane is formed on the substrate, and incident light that has perpendicularly entered the slope is made to enter the light absorbing layer obliquely with respect to the vertical direction.

公开(公告)号：US20240145612A1

公开(公告)日：2024-05-02

申请号：US18506083

申请日：2023-11-09

Applicant: Purdue Research Foundation ,  The Governors of the University of Alberta

Inventor： Thomas R. Jones ,  Dimitrios Peroulis ,  Alden N. Fisher ,  Douglas W. Barlage

IPC: H01L31/09 ,  H01L31/02 ,  H01L31/18 ,  H01P11/00

CPC classification number: H01L31/09 ,  H01L31/02002 ,  H01L31/1804 ,  H01P11/002 ,  H01L31/035281

Abstract: A waveguide assembly integrated with a semiconductor wafer is provided. The waveguide assembly includes a waveguide channel defined by internal walls of the wafer lined with a metallic layer, and having at least one port for transmission of the RF signal into or out of the waveguide channel. The waveguide assembly also includes a semiconductor obstacle member disposed in the waveguide channel. The waveguide assembly may be fabricated using etching and deposition processes for semiconductor devices. In use, selectively varying either one or both of frequency or power level of electromagnetic radiation applied to the obstacle member varies electrical conductance of the obstacle member, and thereby varies the electrical impedance of the obstacle member to transmission of the RF signal through the waveguide channel. The waveguide assembly may be used for switching, attenuating, routing, filtering, and transforming the RF signal.

公开(公告)号：US11961932B2

公开(公告)日：2024-04-16

申请号：US17434944

申请日：2020-02-28

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Kenji Kurata ,  Yusuke Otake ,  Yuji Isogai

IPC: H01L31/107 ,  H01L31/0232 ,  H01L31/0352

CPC classification number: H01L31/107 ,  H01L31/02327 ,  H01L31/035281

Abstract: A photodetector comprising: a separation region that is provided in a semiconductor substrate and defines a pixel region; a hole accumulation region that is provided in the semiconductor substrate of the pixel region along a side surface of the separation region; a multiplication region that is provided in the semiconductor substrate of the pixel region and is configured by joining a first conductivity type region and a second conductivity type region from the surface side of the semiconductor substrate in the thickness direction of the semiconductor substrate; and an insulating region provided in the semiconductor substrate in a region between the multiplication region and the hole accumulation region, wherein a formation depth of the insulating region is larger than a formation depth of the first conductivity type region.

公开(公告)号：US11935972B2

公开(公告)日：2024-03-19

申请号：US17738984

申请日：2022-05-06

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Kieran Mark Tracy ,  David D. Smith ,  Venkatasubramani Balu ,  Asnat Masad ,  Ann Waldhauer

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

Abstract: Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.