公开(公告)号：US07335945B2

公开(公告)日：2008-02-26

申请号：US11012695

申请日：2004-12-16

Applicant: Dae Woo Lee ,  Tae Moon Roh ,  Sung Ku Kwon ,  Il Yong Park ,  Yil Suk Yang ,  Byoung Gon Yu ,  Jong Dae Kim

Inventor： Dae Woo Lee ,  Tae Moon Roh ,  Sung Ku Kwon ,  Il Yong Park ,  Yil Suk Yang ,  Byoung Gon Yu ,  Jong Dae Kim

IPC: H01L29/78 ,  H01L21/8234

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78645

Abstract: Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.

Abstract translation: 提供一种多栅极MOS晶体管及其制造方法。 垂直堆叠在硅绝缘体（SOI）基板上的两个硅散热片，上硅片的四个侧表面和下硅片的三个侧表面用作通道。 因此，通道宽度增加，从而提高了器件的电流驱动能力，并且可以通过工艺的优化和稳定性来制造高性能纳米级半导体IC和高度集成的存储器IC。

公开(公告)号：USD562499S1

公开(公告)日：2008-02-19

申请号：US29286072

申请日：2007-04-20

Applicant: Il Yong Park

Designer： Il Yong Park

公开(公告)号：USD560857S1

公开(公告)日：2008-01-29

申请号：US29276653

申请日：2007-01-31

Applicant: Il-Yong Park

Designer： Il-Yong Park

公开(公告)号：USD458031S1

公开(公告)日：2002-06-04

申请号：US29144281

申请日：2001-07-02

Applicant: IL-Yong Park

Designer： IL-Yong Park

公开(公告)号：USD666772S1

公开(公告)日：2012-09-04

申请号：US29393511

申请日：2011-06-06

Applicant: Il-Yong Park

Designer： Il-Yong Park

公开(公告)号：US08231520B2

公开(公告)日：2012-07-31

申请号：US12195605

申请日：2008-08-21

Applicant: Jin Ho Cho ,  Il Yong Park ,  Kyu Yup Lee

Inventor： Jin Ho Cho ,  Il Yong Park ,  Kyu Yup Lee

IPC: H04R25/00

CPC classification number: H04R25/606 ,  H04R17/00

Abstract: The present invention relates to a round window driving transducer for easy implantation and an implantable hearing device having the same. The round window driving transducer is implantable in the round window of the cochlea in the middle ear cavity, and has excellent high frequency characteristics, which can assist patients with sensorineural hearing loss to hear sound better. The round window driving transducer can be placed inside the middle ear cavity, radiate sound with high efficiency, and be implanted by surgery using a fixing part formed with shape memory alloy, shape memory resin, or a bendable spring structure. Further, the round window driving transducer can overcome problems of the prior art, such as a difficult surgery and low vibration efficiency, which would inevitably occur when floating mass transducers are implanted in a drilled groove in the bone or when various types of piezoelectric transducers are implanted in the round window.

Abstract translation: 本发明涉及一种用于容易植入的圆窗驱动换能器和具有该圆形窗驱动换能器的植入式听力装置。 圆窗驱动传感器可植入中耳耳蜗的圆窗，具有优异的高频特性，可以帮助感觉神经性听力损失患者听到更好的声音。 圆窗驱动传感器可以放置在中耳腔内，高效率地辐射声音，并且通过使用由形状记忆合金，形状记忆树脂或可弯曲弹簧结构形成的固定部分的手术植入。 此外，圆窗驱动传感器可以克服现有技术的问题，例如手术困难和振动效率低，当将浮动质量换能器植入骨中的钻孔中时或者当各种类型的压电换能器 植入圆窗。

公开(公告)号：US08216123B2

公开(公告)日：2012-07-10

申请号：US12175606

申请日：2008-07-18

Applicant: Jin-Ho Cho ,  Il-Yong Park ,  Ki-Woong Seong

Inventor： Jin-Ho Cho ,  Il-Yong Park ,  Ki-Woong Seong

IPC: H04R25/00

CPC classification number: H04R25/606

Abstract: An implantable middle ear hearing device having a tubular vibration transducer to drive a round window is designed to input sound to a round window opposite an oval window in an inner ear. The tubular vibration transducer has a unique structure that does not attenuate the magnitude of a signal, particularly, in a high frequency band. Sound delivery effect is much higher than those of conventional schemes. It is also possible to minimize difficulties associated with and problems resulting from the operation, which the conventional methods would have. Further, the transducer can have a relatively less compact than ossicle contact type transducers, and thus be easily fabricated. The hearing device can be applied to a sensorineural hearing loss patient with the ossicle damaged. Moreover, since sound is directly transmitted without through the ear drum and the ossicle, high efficiency sound delivery is achievable and hearing loss compensation are easy.

Abstract translation: 具有用于驱动圆形窗口的管状振动传感器的植入式中耳听力装置被设计成将声音输入到与内耳中的椭圆形窗口相对的圆形窗口。 管状振动传感器具有不衰减信号幅度的独特结构，特别是在高频带中。 声音传播效果远高于常规方案。 也可以将常规方法所具有的与操作相关的困难和问题最小化。 此外，换能器可以具有比小骨接触型换能器更小的紧凑性，因此可以容易地制造。 听力装置可以应用于具有小骨损伤的感觉神经性听力损失患者。 此外，由于声音直接传播而不通过耳鼓和小骨，所以可以实现高效率的声音传递，并且听力损失补偿容易。

公开(公告)号：US08189274B2

公开(公告)日：2012-05-29

申请号：US12923349

申请日：2010-09-15

Applicant: Il Yong Park

Inventor： Il Yong Park

IPC: G02B9/34

CPC classification number: G02B13/004 ,  G02B13/16

Abstract: There is provided an imaging optical system installed in a mobile communications terminal and a personal digital assistant (PDA) or utilized in a surveillance camera and a digital camera. The imaging optical system including, sequentially from an object side in front of an image plane: a first lens having positive refractive power and two convex surfaces; a second lens having negative refractive power and two concave surfaces; a third lens having positive refractive power and a meniscus shape; and a fourth lens having a concave object-side surface. The fourth lens has a shape satisfying following condition 1: 10

Abstract translation: 提供了一种安装在移动通信终端和个人数字助理（PDA）中或在监视摄像机和数字照相机中使用的成像光学系统。 该成像光学系统包括：从图像平面前方的物体侧依次形成具有正折光力的第一透镜和两个凸面; 具有负屈光力的第二透镜和两个凹面; 具有正屈光力和弯月面形状的第三透镜; 以及具有凹入物侧表面的第四透镜。 第四透镜具有满足以下条件1：10 <| R8 / F | <50条件1的形状，其中R8是第四透镜的物体侧表面的曲率半径，F是 成像光学系统。

公开(公告)号：US07902020B2

公开(公告)日：2011-03-08

申请号：US12571468

申请日：2009-10-01

Applicant: Il-Yong Park

Inventor： Il-Yong Park

IPC: H01L21/8249 ,  H01L21/38

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/66689 ,  H01L29/7817

Abstract: A semiconductor device includes a first conductivity-type deep well formed in a substrate, a plurality of device isolation layers formed in the substrate in which the first conductivity-type deep well is formed, a second conductivity-type well formed on a portion of the first conductivity-type deep well between two of the device isolation layers, a first gate pattern formed over a portion of the second conductivity-type well, a second gate pattern formed over one of the device isolation layers, a source region formed in an upper surface of the second conductivity-type well to adjoin a first side of the first gate pattern, a first drain region formed to include the interface between an upper surface of the second conductivity-type well adjoining a second side of the first gate pattern and an upper surface of the first conductivity-type deep well adjoining the second side of the first gate pattern, and a second drain region formed in an upper surface of the first conductivity-type deep well to be spaced from the second conductivity-type well.

Abstract translation: 半导体器件包括在衬底中形成的第一导电型深阱，形成在其中形成有第一导电型深阱的衬底中的多个器件隔离层，形成在第一导电型阱的一部分上的第二导电型阱 两个器件隔离层之间的第一导电型深阱，形成在第二导电类型阱的一部分上的第一栅极图案，形成在器件隔离层之一上的第二栅极图案，形成在上部 所述第二导电类型阱的表面邻接所述第一栅极图案的第一侧;第一漏极区，形成为包括所述第二导电类型阱的与所述第一栅极图案的第二侧相邻的上表面和 与第一栅极图案的第二侧邻接的第一导电型深阱的上表面和形成在第一导电类型深w的上表面中的第二漏极区 以与第二导电型阱间隔开。

公开(公告)号：USD574112S1

公开(公告)日：2008-07-29

申请号：US29283503

申请日：2007-08-16

Applicant: Il-Yong Park

Designer： Il-Yong Park