摘要:
An organic light emitting diode (OLED) display includes a light-emitting region including an organic emission layer and a non-light-emitting region neighboring the light-emitting region. The OLED display includes a first electrode positioned at the light-emitting region and including a plurality of division regions divided according to a virtual cutting line crossing the light-emitting region, an organic emission layer positioned on the first electrode, a second electrode positioned on the organic emission layer, a driving thin film transistor connected to the first electrode, and a plurality of input terminals positioned at the non-light-emitting region and respectively connecting between each of division regions and the driving thin film transistor.
摘要:
A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction.
摘要:
A display device includes a first insulation layer on a substrate, gate wires on the first insulation layer, the gate wires extending in a first direction, a second insulation layer on the gate wires, data wires on the second insulation layer, the data wires extending in a second direction crossing the first direction, pixels at intersection regions of gate wires and data wires, respectively, the pixels being connected to respective gate wires and data wires, and data leading diodes having an island form and connected to the data wires, the data leading diodes being configured to induce breakage of the first insulation layer when external static electricity passes through the data wires.
摘要:
An organic light emitting display device includes a pixel unit including a plurality of pixels formed in regions where a plurality of scan lines and a plurality of data lines cross each other, a first scan driving unit detecting a defect of the plurality of pixels by sequentially applying a first test signal to the plurality of scan lines, and a second scan driving unit detecting a defect of the plurality of pixels by simultaneously applying a second test signal to the plurality of scan lines.
摘要:
A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.