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    Magnetic film forming method
    41.
    发明授权
    Magnetic film forming method 失效
    磁膜成型方法

    公开(公告)号：US06210544B1

    公开(公告)日：2001-04-03

    申请号：US09496163

    申请日：2000-02-01

    申请人： Yoshito Sasaki

    发明人： Yoshito Sasaki

    IPC分类号： H01F1000

    CPC分类号： H01F41/183 ,  G11B5/3109

    摘要： Disclosed is a magnetic film forming method of forming a magnetic film on a substrate by preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni and a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and making a target by sintering the powders of the material A and the material B or preparing the material A formed of oxide of the element T of at least one kind of Fe, Co, and Ni, the material B formed of oxide of the element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and a material C formed of an element S of at least one kind of Fe, Co, and Ni and making a target by sintering the powders of the material A, the material B and the material C; disposing the target in a film forming apparatus so that the target confronts a substrate; and forming the magnetic film on the substrate.

    摘要翻译： 公开了一种通过制备由至少一种Fe，Co和Ni的元素T的氧化物形成的材料A和由元素M的氧化物形成的材料B在基板上形成磁性膜的磁性膜形成方法 的选自Ti，Zr，Hf，Nb，Ta，Cr，Mo，Si，P，C，W，B，Al，Ga，Ge和稀土元素中的至少一种，并通过烧结粉末 材料A和材料B或制备由至少一种Fe，Co和Ni的元素T的氧化物形成的材料A，由选自Ti中的至少一种元素M的氧化物形成的材料B ，Zr，Hf，Nb，Ta，Cr，Mo，Si，P，C，W，B，Al，Ga，Ge和稀土元素以及由至少一种Fe， Co和Ni，并通过烧结材料A，材料B和材料C的粉末制成靶材; 将靶设置在成膜装置中，使得靶与衬底相对; 并在基片上形成磁膜。