公开(公告)号：US20190019670A1

公开(公告)日：2019-01-17

申请号：US16000109

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/00 ,  B08B7/00

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.