公开(公告)号：US10571806B2

公开(公告)日：2020-02-25

申请号：US16327363

申请日：2017-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Frank Staals ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US09958789B2

公开(公告)日：2018-05-01

申请号：US15186031

申请日：2016-06-17

Applicant: ASML Netherlands B.V.

Inventor： Peter Hanzen Wardenier ,  Frank Staals ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Hans Van Der Laan

IPC: G03F7/20 ,  G01B11/03

CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.