公开(公告)号：US20240353747A1

公开(公告)日：2024-10-24

申请号：US18329584

申请日：2023-06-06

Applicant: United Microelectronics Corp.

Inventor： Pin Han Huang

IPC: G03F1/36 ,  G03F1/80 ,  G03F7/20

CPC classification number: G03F1/36 ,  G03F1/80 ,  G03F7/70491 ,  G03F7/70616

Abstract: A dissection method for optical proximity correction includes the following steps. An initial dissection is performed to define each side of a layout pattern as an original segment so as to form multiple original segments. It is determined whether an opposite side of a target side has an inside corner. A corner opposite dissection is performed to a target side to form multiple intermediate segments. It is judge which type of included angles between a target segment and each of its adjacent sides belongs to. A symmetrical dissection is performed according to the type of the included angles.

公开(公告)号：US20240302284A1

公开(公告)日：2024-09-12

申请号：US18435632

申请日：2024-02-07

Applicant: NOVA LTD.

Inventor： Yonatan OREN

IPC: G01N21/65 ,  G01N21/95 ,  G03F7/00

CPC classification number: G01N21/65 ,  G01N21/9501 ,  G03F7/70616 ,  G01N2201/0231 ,  G01N2201/06113

Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.

公开(公告)号：US12086973B2

公开(公告)日：2024-09-10

申请号：US17608015

申请日：2020-04-02

Applicant: ASML Netherlands B.V.

Inventor： Teunis Willem Tukker ,  Arie Jeffrey Den Boef ,  Nitesh Pandey ,  Marinus Petrus Reijnders ,  Ferry Zijp

IPC: G06T7/00 ,  G01N21/47 ,  G02B5/30 ,  G02B27/28 ,  G02B27/42 ,  G03F7/00

CPC classification number: G06T7/0004 ,  G01N21/4788 ,  G02B5/3083 ,  G02B27/283 ,  G02B27/4205 ,  G03F7/70616 ,  G03F7/706851 ,  G06T2207/10148 ,  G06T2207/30148

Abstract: Disclosed is a detection apparatus for simultaneous acquisition of multiple images of an object at a plurality of different focus levels; comprising: a modulator for obtaining multiple beam copies of an incoming beam; and a detector operable to capture said multiple beam copies, such that at two of said multiple beam copies are captured at different focus levels. Also disclosed is an inspection apparatus comprising such a detection system.

公开(公告)号：US12085520B2

公开(公告)日：2024-09-10

申请号：US17423869

申请日：2020-01-17

Applicant: KAPTEYN MURNANE LABORATORIES, INC. DBA KM LABS INC.

Inventor： Henry C. Kapteyn ,  Bin Wang ,  Chen-Ting Liao ,  Margaret Murnane

IPC: G01N21/47 ,  G01N23/20 ,  G01N23/20008 ,  G01N23/20091 ,  G01N23/205 ,  G01N23/2055 ,  G03F7/00 ,  G03F7/20

CPC classification number: G01N23/20008 ,  G01N23/20 ,  G01N23/20091 ,  G01N23/205 ,  G01N23/2055 ,  G03F7/2039 ,  G03F7/70616 ,  G01N2223/1006

Abstract: Apparatus and methods for coherent diffraction imaging. This is accomplished by acquiring data in a CDI setup with a CMOS or similar detector. The object is illuminated with coherent light such as EUV light which may be pulsed. This generates diffraction patterns which are collected by the detector, either in frames or continuously (by recording the scan position during collection). Pixels in the CDI data are thresholded and set to zero photons if the pixel is below the threshold level. Pixels above the threshold may be set to a value indicating one photon, or multiple thresholds may be used to set pixels values to one photon, two photons, etc. In addition, multiple threshold values may be used to detect different photon energies for illumination at multiple wavelengths.

公开(公告)号：US20240290575A1

公开(公告)日：2024-08-29

申请号：US18655582

申请日：2024-05-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  NATIONAL TSING HUA UNIVERSITY

Inventor： Ya-Chin KING ,  Chrong-Jung LIN ,  Burn-Jeng LIN ,  Chien-Ping WANG ,  Shao-Hua WANG ,  Chun-Lin CHANG ,  Li-Jui CHEN

IPC: H01J37/304 ,  G03F7/00 ,  H01J37/30 ,  H01L27/144 ,  H01L31/02 ,  H01L31/113 ,  H01L31/18

CPC classification number: H01J37/304 ,  G03F7/70516 ,  G03F7/7055 ,  G03F7/70616 ,  H01J37/3002 ,  H01L27/1446 ,  H01L31/02005 ,  H01L31/1136 ,  H01L31/18

Abstract: A semiconductor structure includes a substrate, a semiconductor detector, a peripheral circuit, and a multilayer interconnection structure. The substrate has a sensing region and a peripheral region. The semiconductor detector is on the sensing region of the substrate. The semiconductor detector includes a first detector unit, a second detector unit, and a third detector unit. Each of the first, second, third detector units includes a first transistor and a second transistor connected in series. A gate of the second transistor is a floating gate. The peripheral circuit is on the peripheral region of the substrate and is coupled to the semiconductor detector. The multilayer interconnection structure is over the substrate. A first number of metallization layers of the multilayer interconnection structure directly above the peripheral circuit is greater than a second number of metallization layers of the multilayer interconnection structure directly above the semiconductor detector.

公开(公告)号：US12055904B2

公开(公告)日：2024-08-06

申请号：US17293373

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Boris Menchtchikov ,  Cyrus Emil Tabery ,  Yi Zou ,  Chenxi Lin ,  Yana Cheng ,  Simon Philip Spencer Hastings ,  Maxime Philippe Frederic Genin

IPC: G06F30/10 ,  G03F7/00 ,  G05B13/02 ,  G05B13/04 ,  G06F30/27 ,  G06N3/045 ,  G06N3/08 ,  G06F119/02 ,  G06F119/22

CPC classification number: G05B13/048 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/706837 ,  G05B13/027 ,  G05B13/042 ,  G06F30/10 ,  G06F30/27 ,  G06N3/045 ,  G06N3/08 ,  G06F2119/02 ,  G06F2119/22

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US11971663B2

公开(公告)日：2024-04-30

申请号：US17626852

申请日：2020-07-07

Applicant: ASML Netherlands B.V.

Inventor： Marinus Petrus Reijnders ,  Hendrik Sabert ,  Patrick Sebastian Uebel

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70616

Abstract: Provided are light sources and methods of controlling them, and devices and methods for use in measurement applications, particularly in metrology, for example in a lithographic apparatus. The methods and devices provide mechanisms for detection and/or correction of variations in the light source, in particular stochastic variations. Feedback or feedforward approaches can be used for the correction of the source and/or the metrology outputs. An exemplary method of controlling the spectral output of a light source which emits a time-varying spectrum of light includes the steps of: determining at least one characteristic of the spectrum of light emitted from the light source; and using said determined characteristic to control the spectral output.

公开(公告)号：US11966169B2

公开(公告)日：2024-04-23

申请号：US17029845

申请日：2020-09-23

Applicant: ASML Holding N.V.

Inventor： Mohamed Swillam ,  Tamer Mohamed Tawfik Ahmed Elazhary ,  Stephen Roux ,  Yuxiang Lin ,  Justin Lloyd Kreuzer

IPC: G03F7/00 ,  G01B11/14 ,  G01B11/27 ,  G02B6/12 ,  G02B6/293 ,  H01L21/67

CPC classification number: G03F7/70633 ,  G01B11/14 ,  G01B11/272 ,  G02B6/12007 ,  G03F7/70575 ,  G03F7/70616 ,  G03F7/7085 ,  G01B2210/56 ,  G02B6/29301 ,  G02B6/29395 ,  G03F7/70608 ,  H01L21/67259

Abstract: A system includes a radiation source, first and second phased arrays, and a detector. The first and second phased arrays include optical elements, a plurality of ports, waveguides, and phase modulators. The optical elements radiate radiation waves. The waveguides guide radiation from a port of the plurality of ports to the optical elements. Phase modulators adjust phases of the radiation waves. One or both of the first and second phased arrays form a first beam and/or a second beam of radiation directed toward a target structure based on the port coupled to the radiation source. The detector receives radiation scattered by the target structure and generates a measurement signal based on the received radiation.

公开(公告)号：US11940740B2

公开(公告)日：2024-03-26

申请号：US17836099

申请日：2022-06-09

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/00 ,  G06F16/26 ,  G03F9/00

CPC classification number: G03F7/706837 ,  G03F7/70525 ,  G03F7/70616 ,  G03F9/7092 ,  G06F16/26

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US20240078450A1

公开(公告)日：2024-03-07

申请号：US18369221

申请日：2023-09-18

Applicant: NOVA LTD

Inventor： EITAN ROTHSTEIN ,  ILYA RUBINOVICH ,  NOAM TAL ,  BARAK BRINGOLTZ ,  YONGHA KIM ,  ARIEL BROITMAN ,  ODED COHEN ,  EYLON RABINOVICH ,  TAL ZAHARONI ,  SHAY YOGEV ,  DANIEL KANDEL

IPC: G06N5/04 ,  G01B11/06 ,  G03F7/00 ,  G06N20/00 ,  H01L21/66 ,  H01L21/68

CPC classification number: G06N5/04 ,  G01B11/06 ,  G03F7/705 ,  G03F7/70616 ,  G06N20/00 ,  H01L21/681 ,  H01L22/26 ,  G01B2210/56

Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.