公开(公告)号：US20190051454A1

公开(公告)日：2019-02-14

申请号：US16056847

申请日：2018-08-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Peng Suo ,  Yu Gu ,  Guan Huei See ,  Arvind Sundarrajan

IPC: H01F41/04 ,  H01L49/02 ,  H01L23/498 ,  H01F27/28 ,  H01L21/48

Abstract: A method of forming a magnetic core on a substrate having a stacked inductor coil includes etching a plurality of polymer layers to form at least one feature through the plurality of polymer layers, wherein the at least one feature is disposed within a central region of a stacked inductor coil formed on the substrate; and depositing a magnetic material within the at least one feature.

公开(公告)号：US08951913B2

公开(公告)日：2015-02-10

申请号：US14303292

申请日：2014-06-12

Applicant: Applied Materials, Inc.

Inventor： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

IPC: H01L21/44 ,  H01L21/02 ,  H01J37/32 ,  H01L21/285 ,  H01L21/74 ,  H01L21/768

CPC classification number: H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

Abstract translation: 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。