公开(公告)号：US10121655B2

公开(公告)日：2018-11-06

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  H01J37/32

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US09922860B2

公开(公告)日：2018-03-20

申请号：US14773005

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: C23C16/00 ,  H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.