公开(公告)号：US20240363311A1

公开(公告)日：2024-10-31

申请号：US18767915

申请日：2024-07-09

申请人： Lam Research Corporation

发明人： Weiyi LUO ,  Youn Gi HONG ,  WeiWu ZHONG ,  Himanshu CHOKSHI

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： H01J37/32183 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

摘要： A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

公开(公告)号：US20240355499A1

公开(公告)日：2024-10-24

申请号：US18641543

申请日：2024-04-22

申请人： Samsung Electronics Co., Ltd. ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

发明人： CHANG SEOK LEE ,  Yohan KIM ,  Hyung-Joon SHIN ,  KYUNGEUN BYUN ,  KEUN WOOK SHIN ,  HYEON JIN SHIN ,  Seungwoo SON ,  Zonghoon LEE

IPC分类号： H01B1/04 ,  C23C16/26 ,  C23C16/50 ,  H01L21/285 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065

CPC分类号： H01B1/04 ,  H01L21/76885 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53276 ,  C23C16/26 ,  C23C16/50 ,  H01L21/28556 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2225/06565

摘要： Spiral graphene nanocrystals having electrical conductivity in a vertical direction due to interlayer covalent bonds, a graphene thin film including the spiral graphene nanocrystals, an interconnect structure manufactured from the spiral graphene nanocrystals or the graphene thin film, and a method of manufacturing the interconnect structure and an electronic device including the interconnect structure.

公开(公告)号：US20240347400A1

公开(公告)日：2024-10-17

申请号：US18752034

申请日：2024-06-24

申请人： Lam Research Corporation

发明人： Sunil Kapoor ,  Thomas Lee Frederick

IPC分类号： H01L21/66 ,  C23C16/455 ,  C23C16/50 ,  G01R15/18 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L22/26 ,  C23C16/45536 ,  C23C16/50 ,  G01R15/18 ,  H01J37/32155 ,  H01J37/32899 ,  H01J37/3299 ,  H01L21/67253 ,  H01J2237/24564 ,  H01J2237/332

摘要： Methods and apparatus for measuring current are disclosed.

公开(公告)号：US20240344196A1

公开(公告)日：2024-10-17

申请号：US18613241

申请日：2024-03-22

申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

发明人： Igor Bargatin ,  Keivan Davami

IPC分类号： C23C16/455 ,  C23C16/01 ,  C23C16/12 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3065

CPC分类号： C23C16/45525 ,  C23C16/01 ,  C23C16/12 ,  C23C16/45555 ,  C23C16/50 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/3065

摘要： A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

公开(公告)号：US12110590B2

公开(公告)日：2024-10-08

申请号：US18381534

申请日：2023-10-18

申请人： Applied Materials, Inc.

发明人： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/45536 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/3321

摘要： A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US12077857B2

公开(公告)日：2024-09-03

申请号：US18222024

申请日：2023-07-14

申请人： ASM IP Holding B.V.

发明人： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

摘要： Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20240282570A1

公开(公告)日：2024-08-22

申请号：US18569100

申请日：2022-06-16

申请人： Lam Research Corporation

发明人： Bhadri N. VARADARAJAN ,  Matthew Scott WEIMER

IPC分类号： H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L21/768

CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02205 ,  H01L21/76831

摘要： Crystalline or amorphous carbon films are deposited on a substrate using radical-activated carbon-containing precursors. The carbon-containing precursors include one or more C—C bonds and/or one or more C—H bonds. Radicals are generated in a remote plasma source located upstream of a reaction chamber, and carbon-containing precursors are flowed into the reaction chamber downstream from the remote plasma source. The radicals interact with the C—C bonds and/or C—H bonds to activate the carbon-containing precursors in an environment adjacent to the substrate. In some implementations, highly conformal amorphous carbon films are deposited by radical-activated carbon-containing precursors.

公开(公告)号：US12068180B2

公开(公告)日：2024-08-20

申请号：US16247026

申请日：2019-01-14

申请人： Applied Materials, Inc.

发明人： Xuesong Lu ,  Lin Zhang ,  Joseph C. Werner ,  Jang Seok Oh ,  Balaji Pasupathy ,  Michael W. Johnson

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01K3/00 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

CPC分类号： H01L21/67248 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02 ,  H01L21/02312 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/68742 ,  H01J2237/24585 ,  H01J2237/3321

摘要： Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US20240258153A1

公开(公告)日：2024-08-01

申请号：US18630688

申请日：2024-04-09

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC分类号： H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC分类号： H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

摘要： Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US20240258077A1

公开(公告)日：2024-08-01

申请号：US18634508

申请日：2024-04-12

申请人： NANOTECH INC.

发明人： Dong Ho CHA

IPC分类号： H01J37/32 ,  C23C16/50

CPC分类号： H01J37/32504 ,  C23C16/50 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32834 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/332

摘要： The present invention relates to a technology for increasing the reliability of measurement by preventing the contamination of a self-plasma chamber provided in order to monitor a deposition operation performed in a process chamber, and has a shielding means capable of preventing an inflow of negative electrode material, which is generated by a sputtering phenomenon, into a discharge chamber when a positive charge of plasma, which is generated in the self-plasma chamber, collides with a negative electrode.