公开(公告)号：US20140167036A1

公开(公告)日：2014-06-19

申请号：US14106645

申请日：2013-12-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jun CHENG ,  Guangcai YUAN

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

Abstract: The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (Vth) drift of the TFT, improve Ion (on-state current)/Ioff (off-state current), and enhance thermal stability.

Abstract translation: 本发明公开了一种薄膜晶体管（TFT），阵列基板及其制造方法以及显示装置。 TFT包括在衬底上形成的栅极，氧化物活性层，源极和漏极，其中源极和漏极过渡层设置在氧化物活性层和源极之间，漏极。 通过在氧化物活性层和源（漏极）之间形成源极和漏极过渡层，从而有效地简化了制造步骤，减少了一个图案化工艺，并节省了一个掩膜工艺。 同时，附加提供的源极和漏极过渡层可以防止氧化物有源层在蚀刻期间被腐蚀，还有效地降低TFT的阈值电压（Vth）漂移，改善离子（导通状态电流）/ Ioff（关闭 - 状态电流），并增强热稳定性。