公开(公告)号：US20210227190A1

公开(公告)日：2021-07-22

申请号：US16764101

申请日：2019-12-13

Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingwen Fan ,  Yukun Sun ,  Bin Zhao ,  Jinghua Miao ,  Xi Li ,  Lili Chen ,  Hao Zhang ,  Jinbao Peng ,  Xuefeng Wang ,  Jianwen Suo ,  Wenyu Li ,  Zhifu Li ,  Shuo Zhang ,  Huidong He

IPC: H04N13/111 ,  G06T5/00 ,  G06T5/50

Abstract: An image processing method is disclosed. The image processing method may include: partitioning an original gridded image to obtain a plurality of regional grid images, wherein the regional grid images are distributed along a direction away from a geometric center of the original gridded image (S300); and adjusting grid vertices of the regional grid images based on anti-distortion parameters to obtain a plurality of regional correction grid images forming a grid correction image (S400). A grid density of each of the regional correction grid images may be smaller than or equal to a grid density of a corresponding regional grid image, and the grid density of each of the plurality of the regional correction grid images may gradually increase along the direction away from the geometric center of the original gridded image.

公开(公告)号：US10884308B2

公开(公告)日：2021-01-05

申请号：US15750810

申请日：2017-08-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  Beijing BOE Optoelectronics Technology Co., Ltd.

Inventor： Xue Cao ,  Junhui Wu ,  Ying Wang ,  Peizhi Cai ,  Zhifu Li ,  Lijun Mao ,  Jiaheng Wang

IPC: G02F1/137 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1335 ,  H01Q1/38 ,  H01Q1/50 ,  H01Q3/36

Abstract: The present disclosure discloses a phase-shift unit, an antenna array, a display panel and a display device. In one embodiment, the phase-shift unit includes a first substrate and a second substrate assembled to each other; a liquid crystal layer between the first substrate and the second substrate; a microstrip line provided at a side of the second substrate facing towards the liquid crystal layer, and configured for receiving a voltage signal that controls deflection of liquid crystal molecules in the liquid crystal layer and for receiving or transmitting an electromagnetic wave signal; and a grounding layer provided on the first substrate and including a via hole corresponding to the microstrip line.

公开(公告)号：US10700107B2

公开(公告)日：2020-06-30

申请号：US15781327

申请日：2017-10-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong He ,  Zhifu Li ,  Guangcai Yuan ,  Haijiao Qian ,  Dongsheng Li

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/10 ,  H01L21/268 ,  H01L29/66 ,  H01L21/02

Abstract: It is provided a low-temperature polysilicon thin film transistor formed on a substrate, including: a gate electrode on the substrate; an active layer on the gate electrode, the active layer including a channel region, the channel region having a polysilicon region and amorphous silicon regions respectively on both sides of the polysilicon region; and an etch stop layer on the active layer. An orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the gate electrode on the substrate, and an area of the orthogonal projection the polysilicon region on the substrate is smaller than an area of the orthogonal projection of the gate electrode on the substrate. The orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the etch stop layer on the substrate.

公开(公告)号：US10700103B2

公开(公告)日：2020-06-30

申请号：US15772304

申请日：2017-08-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Zhifu Li ,  Zhiyuan Ji ,  Jikai Yao

IPC: H01L27/12 ,  G09G3/32 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1335 ,  G02F1/1333 ,  H01L29/786

Abstract: An array substrate, a method for fabricating the same, and a display device are disclosed. The array substrate includes a substrate and a plurality of pixel units on the substrate. Each pixel unit comprises at least a thin film transistor and an ILED. A drain of each thin film transistor is connected with a first pole of each ILED through a first electrode line, and a second pole of each ILED is connected with a second electrode line. Since the ILEDs have the advantages of small size, high brightness, high contrast, lightness of weight, low consumption, wide gamut, high efficiency, long lifetime, quick response or the like, the array substrate onto which the ILEDs are applied by transferring has a high resolution, an improved display effect or the like.

公开(公告)号：US20190259879A1

公开(公告)日：2019-08-22

申请号：US15781327

申请日：2017-10-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong He ,  Zhifu Li ,  Guangcai Yuan ,  Haijiao Qian ,  Dongsheng Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: It is provided a low-temperature polysilicon thin film transistor formed on a substrate, including: a gate electrode on the substrate; an active layer on the gate electrode, the active layer including a channel region, the channel region having a polysilicon region and amorphous silicon regions respectively on both sides of the polysilicon region; and an etch stop layer on the active layer. An orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the gate electrode on the substrate, and an area of the orthogonal projection the polysilicon region on the substrate is smaller than an area of the orthogonal projection of the gate electrode on the substrate. The orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the etch stop layer on the substrate.