PATTERNING METHOD OF FILM, MICROFLUIDIC DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210129139A1

    公开(公告)日:2021-05-06

    申请号:US16639867

    申请日:2019-01-03

    IPC分类号: B01L3/00 B81C1/00

    摘要: A patterning method of a film is disclosed. The method including: providing a film including a first surface; forming n etching barrier layers on the first surface of the film, and n is an integer larger than or equal to 2; and performing n etching processes on the film to form a recessed structure on the first surface using the n etching barrier layers as masks, the recessed structure includes n bottom surfaces respectively having different depths. Two adjacent etching processes of the n etching processes include a previous etching process and a subsequent etching process, and after the previous etching process is completed, a part of the n etching barrier layers is removed to form a mask for the subsequent etching process; a material of the part of the n etching barrier layers which is removed is different from a material of the mask of the subsequent etching process.