公开(公告)号：US6080626A

公开(公告)日：2000-06-27

申请号：US996923

申请日：1997-12-23

申请人： Bruno Vajana ,  Carlo Cremonesi ,  Roberta Bottini ,  Giovanna Dalla Libera

发明人： Bruno Vajana ,  Carlo Cremonesi ,  Roberta Bottini ,  Giovanna Dalla Libera

IPC分类号： H01L21/8247

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A memory cell of the EEPROM type formed on a semiconductor material substrate having a first conductivity type includes a drain region having a second conductivity type and extending at one side of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region. The region of electric continuity is produced by implantation at a predetermined angle of inclination.

摘要翻译： 形成在具有第一导电类型的半导体材料基板上的EEPROM型存储单元包括具有第二导电类型的漏极区域，并且在包括薄隧道氧化物区域的栅极氧化物区域的一侧延伸。 存储单元还包括具有第二导电类型的电连续性区域，横向形成在薄隧道氧化物区域下方，并且部分地与漏极区域重叠。 通过以预定的倾斜角度的注入产生电连续性的区域。

公开(公告)号：US5486487A

公开(公告)日：1996-01-23

申请号：US139800

申请日：1993-10-19

申请人： Giancarlo Ginami ,  Enrico Laurin ,  Silvia Lucherini ,  Bruno Vajana

发明人： Giancarlo Ginami ,  Enrico Laurin ,  Silvia Lucherini ,  Bruno Vajana

IPC分类号： G11C17/12 ,  H01L27/112 ,  H01L21/266

CPC分类号： H01L27/112 ,  G11C17/12

摘要： A method of manufacture of a low-capacitance programmed cell structure for read-only memory circuits comprises a field-effect transistor having conventional source and drain regions separated by a channel region overlaid by the gate of the transistor. This ROM memory cell is programmed by a channel implant extending only from the source region for a selected distance into the channel region.

摘要翻译： 制造用于只读存储器电路的低电容编程单元结构的方法包括具有由晶体管的栅极重叠的沟道区隔开的常规源极和漏极区域的场效应晶体管。 该ROM存储器单元通过仅从源极区域延伸一个选定距离进入沟道区域的沟道注入来编程。